类别是'category.门驱动器 ICs' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 电源 | 温度等级 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 输出电流 | 传播延迟 | 静态电流 | 输入类型 | 接通延迟时间 | 上升时间 | 下降时间(典型值) | 输出极性 | 发布时间 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流(源极,漏极) | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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![]() | IR2181STRPBF | Infineon Technologies | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.7V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | yes | 活跃 | 2 (1 Year) | 8 | EAR99 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2181SPBF | R-PDSO-G8 | Non-Inverting | 40ns 20ns | Independent | 2 | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS2127SPBF | Infineon Technologies | 数据表 | 120 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | 0.8V 2.5V | 150 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 12V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2127SPBF | 1 | 20V | 600mA | 300μA | 625mW | 120μA | 200mA | 200 ns | 60μA | Non-Inverting | 150 ns | 130ns | 65 ns | 150 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.2 μs | 0.6A | IGBT, N-Channel MOSFET | 290mA 600mA | YES | 0.2 μs | 600V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
![]() | IR2125STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | High-Side | 0.8V 2.2V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Tin (Sn) | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 0V~18V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2125SPBF | 不合格 | Non-Inverting | 43ns 26ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 3.3A | IGBT, N-Channel MOSFET | 1.6A 3.3A | YES | 0.25 μs | 500V | 2.65mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
EL7252CSZ | Renesas Electronics America Inc. | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 3 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Low-Side | 0.8V 2.4V | Commercial grade | -40°C~125°C TJ | Tube | 2002 | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | 未说明 | 10MHz | 未说明 | EL7252 | 8 | 16.5V | Inverting | 10ns | 10ns 10ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel, P-Channel MOSFET | 2A 2A | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2130STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | 0.8V 2.2V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 8542.39.00.01 | 10V~20V | DUAL | 鸥翼 | 未说明 | 15V | 1.27mm | 未说明 | IR2130SPBF | R-PDSO-G28 | 不合格 | 15V | Inverting | 80ns 35ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 250mA 500mA | 600V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2103SPBF | Infineon Technologies | 数据表 | 61 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 3V | -40°C~150°C TJ | Tube | 1996 | e3 | 最后一次购买 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2103SPBF | R-PDSO-G8 | 不合格 | 15V | Inverting, Non-Inverting | 100ns 50ns | Independent | 2 | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS21814STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | 0.8V 2.5V | 35 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21814SPBF | 10V | 2.3A | 240μA | 1W | 240μA | 1.9A | 330 ns | Non-Inverting | 35 ns | 60ns | 35 ns | 40ns 20ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | IRS2110STRPBF | Infineon Technologies | 数据表 | 1000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Half-Bridge | 6V 9.5V | 10 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Tin (Sn) | 1.25W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2110SPBF | 10V | 2.5A | 15V | 340μA | 1.25W | 340μA | 2.5A | 160 ns | Non-Inverting | 10 ns | 35ns | 25 ns | 25ns 17ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 2.5A 2.5A | 0.15 μs | TRANSIENT; UNDER VOLTAGE | 500V | 2.3622mm | 10.4902mm | 7.5946mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | IRS2104SPBF | Infineon Technologies | 数据表 | 656565 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | 0.8V 2.5V | 60 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2104SPBF | 2 | 620V | 600mA | 15V | 270μA | 625mW | 270μA | 290mA | 820 ns | Non-Inverting | 60 ns | 170ns | 90 ns | 150 ns | 70ns 35ns | Synchronous | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | IR2117SPBF | Infineon Technologies | 数据表 | 4 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side | 6V 9.5V | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2117SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS23364DSTRPBF | Infineon Technologies | 数据表 | 10 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | 0.8V 2.5V | 530 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 100Ohm | Matte Tin (Sn) | 8542.39.00.01 | 1.6W | 11.5V~20V | DUAL | 鸥翼 | 1 | 15V | 1.27mm | IRS23364DSPBF | 不合格 | 350mA | 1.6W | 200mA | 750 ns | Non-Inverting | 530 ns | 190ns | 75 ns | TRUE | STANDARD | 125ns 50ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.75 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 0.75 μs | 600V | 2.3622mm | 18.0848mm | 7.5946mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
![]() | ISL89400ABZ | Intersil (Renesas Electronics America) | 数据表 | 10500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | SOIC | 8 | 2.27W | 2001 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 125°C | -40°C | DUAL | 鸥翼 | 260 | 1 | 12V | 30 | 不合格 | 1.25A | AUTOMOTIVE | 114V | 9V | 2.2mA | 2.2mA | 1.25A | 1μs | 1 μs | 基于半桥的mosfet驱动器 | 2 | 60 μs | 1.25A | YES | 60 μs | 1.75mm | 4.9mm | 3.9mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS4426STRPBF | Infineon Technologies | 数据表 | 3 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | 0.8V 2.5V | 50 ns | -40°C~150°C TJ | Tape & Reel (TR) | 2006 | 活跃 | 2 (1 Year) | 8 | EAR99 | 625mW | 6V~20V | DUAL | 鸥翼 | 未说明 | 2 | 15V | 未说明 | IRS4426 | 不合格 | 3.3A | 15V | 625mW | 2.3A | 95 ns | Inverting | 50 ns | 55ns | 55 ns | 25ns 25ns | 基于半桥的外设驱动器 | Independent | 2 | 0.095 μs | IGBT, N-Channel MOSFET | 2.3A 3.3A | 0.095 μs | TRANSIENT | 1.4986mm | 4.9784mm | 3.9878mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | IRS21091STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | 0.8V 2.5V | 200 ns | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IRS21091SPBF | 不合格 | 600mA | 15V | 1.6mA | 625mW | 1.6mA | 290mA | 950 ns | Non-Inverting | 70 ns | 220ns | 80 ns | 100ns 35ns | Synchronous | 2 | 0.95 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; THERMAL | 600V | 1.4986mm | 4.9784mm | 3.9878mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
![]() | IRS2118SPBF | Infineon Technologies | 数据表 | 2220 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | 6V 9.5V | 105 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2118SPBF | 1 | 620V | 600mA | 340μA | 625mW | 340μA | 290mA | 200 ns | Inverting | 125 ns | 130ns | 65 ns | 105 ns | 75ns 35ns | 基于缓冲器或反相器的外设驱动器 | Single | 0.2 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
![]() | MAX5064BATC T | Maxim Integrated | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 12-WQFN Exposed Pad | 12 | 0.8V 2V | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | Matte Tin (Sn) | 1.9512W | 8V~12.6V | QUAD | 260 | 1 | 12V | 0.8mm | MAX5064 | 12 | 2A | 3mA | 3mA | Inverting, Non-Inverting | 65ns | 65 ns | 65ns 65ns | Independent | 2 | 0.063 μs | 2A | N-Channel MOSFET | 2A 2A | YES | 0.063 μs | 125V | 0.8mm | 4mm | 4mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
![]() | IRS21844STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | 0.8V 2.5V | 40 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21844SPBF | 10V | 2.3A | 15V | 1.6mA | 1W | 1.6mA | 1.9A | 900 ns | Non-Inverting | 90 ns | 60ns | 35 ns | 40ns 20ns | Synchronous | 2 | 0.9 μs | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.4 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | IR2132STRPBF | Infineon Technologies | 数据表 | 25 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | 0.8V 2.2V | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 8542.39.00.01 | 10V~20V | DUAL | 鸥翼 | 未说明 | 3 | 15V | 1.27mm | 未说明 | IR2132SPBF | R-PDSO-G28 | 不合格 | 15V | Inverting | 80ns 35ns | 3-Phase | 6 | 0.85 µs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.55 µs | 600V | 17.9mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2108STRPBF | Infineon Technologies | 数据表 | 500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.9V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2108SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 150ns 50ns | Independent | 2 | 0.3 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2127STRPBF | Infineon Technologies | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 3V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 12V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2127SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | 600V | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2184STRPBF | Infineon Technologies | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.7V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | yes | 活跃 | 2 (1 Year) | 8 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2184SPBF | R-PDSO-G8 | Non-Inverting | 40ns 20ns | Independent | 2 | 0.9 µs | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.4 µs | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS2186SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side or Low-Side | 0.8V 2.5V | 170 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2186SPBF | 2 | 620V | 4A | 15V | 240μA | 625mW | 240μA | 4A | 250 ns | Non-Inverting | 170 ns | 38ns | 30 ns | 22ns 18ns | 基于缓冲器或反相器的外设驱动器 | Independent | 4A | IGBT, N-Channel MOSFET | 4A 4A | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
![]() | IRS21834SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | 0.8V 2.5V | 220 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21834SPBF | 620V | 2.3A | 15V | 1mA | 1W | 1.6mA | 1.9A | 330 ns | Inverting, Non-Inverting | 180 ns | 60ns | 35 ns | 220 ns | 40ns 20ns | Independent | 2 | 1.9A | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | AUIRS2112S | Infineon Technologies | 数据表 | 13250 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Half-Bridge | 6V 9.5V | 50 ns | -40°C~150°C TJ | Tube | 2011 | Automotive, AEC-Q100 | e3 | Obsolete | 3 (168 Hours) | 16 | EAR99 | Tin (Sn) | 1.25W | 3V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | AUIRS2112S | 600mA | 15V | 1.25W | 290mA | 230 ns | Non-Inverting | 50 ns | 140ns | 60 ns | 60ns 30ns | Independent | 2 | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 2.35mm | 10.4902mm | 7.5946mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | HIP2100IBZ | Renesas Electronics America Inc. | 数据表 | 7012 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 9 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 4V 7V | Industrial grade | -55°C~150°C TJ | Tube | 2001 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP2100 | 8 | R-PDSO-G8 | 12V | Non-Inverting | 10ns 10ns | Independent | 2 | 0.045 µs | N-Channel MOSFET | 2A 2A | YES | 0.045 µs | 114V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant |
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