类别是'category.门驱动器 ICs' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 通道数量 | 最大电源电压 | 最小电源电压 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 输入类型 | 接通延迟时间 | 输出特性 | 上升时间 | 下降时间(典型值) | 输出极性 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输入电流 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流(源极,漏极) | 最大结点温度(Tj) | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IRS2124STRPBF | Infineon Technologies | 数据表 | 2065 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | Obsolete | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IRS2124SPBF | 不合格 | 500mA | 240 ns | Inverting | 240 ns | 200ns | 200 ns | 80ns 80ns | 基于半桥的mosfet驱动器 | Single | 1 | 240 μs | 0.5A | IGBT, N-Channel MOSFET | 500mA 500mA | YES | 240 μs | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | IRS2332DSPBF | Infineon Technologies | 数据表 | 1895 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | 0.8V 2.2V | 500 ns | -40°C~150°C TJ | Tube | 1996 | Obsolete | 3 (168 Hours) | 28 | EAR99 | 1.6W | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IRS2332DSPBF | 1 | 不合格 | 620V | 500mA | 4mA | 1.6W | 200mA | 700 ns | Inverting | 50 ns | 80ns | 35 ns | 80ns 35ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.7 μs | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.7 μs | 600V | 2.35mm | 18.1mm | 7.6mm | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
![]() | IR25601SPBF | Infineon Technologies | 数据表 | 43 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | 0.8V 2.3V | 330 ns | -40°C~150°C TJ | Tube | 1996 | 最后一次购买 | 2 (1 Year) | 8 | EAR99 | 625mW | 10V~20V | DUAL | 鸥翼 | 15V | IR25601SPBF | 20V | 130mA | 15V | 130mA | 625mW | 130mA | 330 ns | Non-Inverting | 50 ns | 300ns | 170 ns | 200ns 100ns | Independent | 2 | IGBT, N-Channel MOSFET | 60mA 130mA | 600V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | IRS2111STRPBF | Infineon Technologies | 数据表 | 10 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8.3V 12.6V | Half-Bridge | 150 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2111SPBF | 10V | 600mA | 15V | 180μA | 625mW | 200mA | 180μA | 950 ns | Inverting, Non-Inverting | 750 ns | 130ns | 65 ns | 75ns 35ns | Synchronous | 2 | 0.95 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
![]() | IRS2112STRPBF | Infineon Technologies | 数据表 | 30000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Half-Bridge | 6V 9.5V | 130 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) | 1.25W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2112SPBF | 600mA | 15V | 180μA | 1.25W | 200mA | 180μA | 180 ns | Non-Inverting | 135 ns | 130ns | 65 ns | 75ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | 0.18 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 2.3622mm | 10.4902mm | 7.5946mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
![]() | LTC4441MPMSE#TRPBF | Linear Technology/Analog Devices | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) Exposed Pad | YES | Low-Side | 1.8V 2V | -55°C~125°C TJ | Tape & Reel (TR) | 2011 | e3 | 活跃 | 1 (Unlimited) | 10 | EAR99 | Matte Tin (Sn) | 5V~25V | DUAL | 鸥翼 | 未说明 | 1 | 7.5V | 0.5mm | 未说明 | LTC4441 | 10 | 不合格 | 7.5V | Non-Inverting | 13ns 8ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 6A | N-Channel MOSFET | 6A 6A | NO | 3mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
![]() | ISL6208CBZ-T | Renesas Electronics America Inc. | 数据表 | 283 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 260 | 1 | 5V | 30 | ISL6208 | 8 | R-PDSO-G8 | 不合格 | Non-Inverting | 8ns 8ns | Synchronous | 2 | 0.03 µs | 4A | N-Channel MOSFET | 2A 2A | YES | 33V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | ISL6208CRZ-T | Renesas Electronics America Inc. | 数据表 | 18000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-VQFN Exposed Pad | YES | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | QUAD | 无铅 | 260 | 1 | 5V | 0.65mm | 30 | ISL6208 | 8 | S-PQCC-N8 | 不合格 | Non-Inverting | 8ns 8ns | Synchronous | 2 | 0.03 µs | 4A | N-Channel MOSFET | 2A 2A | YES | 33V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
![]() | ISL6208BCRZ-T | Renesas Electronics America Inc. | 数据表 | 5977 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | 0.5V 2V | Commercial grade | -10°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX17491GTA | Maxim Integrated | 数据表 | 65 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-WQFN Exposed Pad | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.9W | 4.2V~5.5V | QUAD | 无铅 | 260 | 1 | 5V | 0.65mm | 30 | MAX17491 | 8 | 不合格 | 8A | 5V | 5V | 300μA | 2.7A | Non-Inverting | 10ns | 8 ns | 10ns 8ns | 基于缓冲器或逆变器的MOSFET驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2.7A | YES | 24V | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
![]() | MAX4428ESA | Maxim Integrated | 数据表 | 25 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Low-Side | 0.8V 2.4V | -40°C~85°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | 30 | MAX4428 | 8 | 不合格 | Inverting, Non-Inverting | TOTEM-POLE | 真倒 | STANDARD | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | NO | 0.06 μs | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | IR21844STRPBF | Infineon Technologies | 数据表 | 3 In Stock | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.7V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | yes | 活跃 | 3 (168 Hours) | 14 | EAR99 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR21844SPBF | R-PDSO-G14 | Non-Inverting | 40ns 20ns | Independent | 2 | 0.9 µs | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.4 µs | 600V | 1.75mm | 8.65mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX15019BASA | Maxim Integrated | 数据表 | 2580 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | Half-Bridge | 0.8V 2V | 36 ns | -40°C~150°C TJ | Tube | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 1.9W | 8V~12.6V | DUAL | 鸥翼 | 1 | 12V | MAX15019 | 8 | 3A | 190μA | 3A | Inverting, Non-Inverting | 36 ns | 5ns | 5 ns | 50ns 40ns | Independent | 2 | 66 µs | 3A | N-Channel MOSFET | 3A 3A | YES | 66 µs | 125V | 3.9mm | 无 | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
![]() | MAX4428EPA | Maxim Integrated | 数据表 | 7500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Low-Side | 0.8V 2.4V | -40°C~85°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~18V | DUAL | 260 | 2 | 30 | MAX4428 | 8 | 不合格 | Inverting, Non-Inverting | TOTEM-POLE | 真倒 | STANDARD | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | NO | 0.06 μs | 9.375mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | TSC428CBA | Maxim Integrated | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | 0.8V 2.4V | 0°C~70°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 450mW | 4.5V~18V | DUAL | 鸥翼 | 260 | 2 | TSC428 | 8 | 1.5A | 400μA | 1.5A | 8mA | Inverting, Non-Inverting | 20ns | 20 ns | 25ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | NO | 0.06 µs | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | HIP2101EIBZ | Renesas Electronics America Inc. | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | Industrial grade | -55°C~150°C TJ | Tube | 2001 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP2101 | 8 | R-PDSO-G8 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.056 µs | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1.68mm | 4.89mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | TSC427CPA | Maxim Integrated | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | 0.8V 2.4V | 0°C~70°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 500mW | 4.5V~18V | DUAL | 260 | 2 | TSC427 | 8 | 1.5A | 400μA | 1.5A | 8mA | Non-Inverting | 20ns | 20 ns | 25ns 25ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | NO | 0.06 µs | 9.375mm | 无 | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | ISL89163FBEBZ | Renesas Electronics America Inc. | 数据表 | 119 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | 1.85V 3.15V | Industrial grade | -40°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89163 | 8 | Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MIC4423YM | Microchip Technology | 数据表 | 8 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | 0.8V 2.4V | 33 ns | Industrial grade | -40°C~150°C TJ | Tube | 2005 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 960mW | 4.5V~18V | MIC4423 | 2 | 25mV | 3A | 2 | 18V | 4.5V | 1.5mA | 3A | 38 ns | Inverting | 33 ns | 23ns | 25 ns | 28ns 32ns | Independent | 2 | N-Channel, P-Channel MOSFET | 3A 3A | 150°C | 1.73mm | 4.93mm | 3.94mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | MAX628CPA | Maxim Integrated | 数据表 | 18 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | 0.8V 2.4V | 0°C~70°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 500mW | 4.5V~18V | DUAL | 260 | 2 | MAX628 | 8 | 25V | 2A | 8mA | 2A | 8mA | Inverting, Non-Inverting | 30ns | 30 ns | 25ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.06 μs | 1μA | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 0.04 μs | 9.375mm | 无 | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
![]() | ICL7667EBA | Maxim Integrated | 数据表 | 5300 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2V | 0°C~150°C TJ | Tube | 1996 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~17V | DUAL | 鸥翼 | 260 | 2 | 15V | 30 | ICL7667 | 8 | R-PDSO-G8 | 不合格 | Inverting | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.04 µs | N-Channel MOSFET | YES | 0.06 µs | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
IXK611S1T/R | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 449.991981mg | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | IX*611 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IXDN430MCI | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | TO-220-5 | 2.299997g | Low-Side | 0.8V 3.5V | -55°C~150°C TJ | Bulk | 2005 | e3 | Obsolete | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | 2W | 8.5V~35V | 260 | 1 | 18V | 35 | IXD*430 | 3 | R-PSFM-T5 | 不合格 | 35V | 3mA | 30A | Non-Inverting | 20ns | 18 ns | 18ns 16ns | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER | Single | 1 | 0.045 µs | 30A | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | YES | 0.039 µs | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
![]() | MAX15013BASA T | Maxim Integrated | 数据表 | 953 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | 0.8V 2V | 35 ns | -40°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 470.6mW | 8V~12.6V | DUAL | 鸥翼 | 260 | 1 | 12V | 未说明 | MAX15013 | 8 | 不合格 | 2A | 3mA | 3mA | Inverting, Non-Inverting | 35 ns | 65ns | 65 ns | 65ns 65ns | Independent | 2 | 63 µs | 2A | N-Channel MOSFET | 2A 2A | YES | 63 µs | 175V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
![]() | IRS21084STRPBF | Infineon Technologies | 数据表 | 30000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | 0.8V 2.5V | 30 ns | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21084SPBF | 10V | 600mA | 15V | 1.6mA | 1W | 290mA | 1.6mA | 300 ns | Inverting, Non-Inverting | 30 ns | 220ns | 80 ns | 100ns 35ns | Independent | 2 | 0.3 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 |
IRS2124STRPBF
Infineon Technologies
分类:PMIC - Gate Drivers
IRS2332DSPBF
Infineon Technologies
分类:PMIC - Gate Drivers
IR25601SPBF
Infineon Technologies
分类:PMIC - Gate Drivers
IRS2111STRPBF
Infineon Technologies
分类:PMIC - Gate Drivers
IRS2112STRPBF
Infineon Technologies
分类:PMIC - Gate Drivers
LTC4441MPMSE#TRPBF
Linear Technology/Analog Devices
分类:PMIC - Gate Drivers
ISL6208CBZ-T
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
12.651790
ISL6208CRZ-T
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
ISL6208BCRZ-T
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
4.117413
MAX17491GTA
Maxim Integrated
分类:PMIC - Gate Drivers
MAX4428ESA
Maxim Integrated
分类:PMIC - Gate Drivers
IR21844STRPBF
Infineon Technologies
分类:PMIC - Gate Drivers
MAX15019BASA
Maxim Integrated
分类:PMIC - Gate Drivers
MAX4428EPA
Maxim Integrated
分类:PMIC - Gate Drivers
TSC428CBA
Maxim Integrated
分类:PMIC - Gate Drivers
HIP2101EIBZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
23.932976
TSC427CPA
Maxim Integrated
分类:PMIC - Gate Drivers
ISL89163FBEBZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
39.623165
MIC4423YM
Microchip Technology
分类:PMIC - Gate Drivers
MAX628CPA
Maxim Integrated
分类:PMIC - Gate Drivers
ICL7667EBA
Maxim Integrated
分类:PMIC - Gate Drivers
IXK611S1T/R
IXYS
分类:PMIC - Gate Drivers
IXDN430MCI
IXYS
分类:PMIC - Gate Drivers
MAX15013BASA T
Maxim Integrated
分类:PMIC - Gate Drivers
IRS21084STRPBF
Infineon Technologies
分类:PMIC - Gate Drivers
