类别是'category.门驱动器 ICs' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 电源 | 通道数量 | 最大电源电压 | 最小电源电压 | 工作电源电流 | 功率耗散 | 输出电流 | 传播延迟 | 电源电流-最大值 | 输入类型 | 输出特性 | 输出极性 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 电源电压1-额定值 | 闸门类型 | 峰值输出电流(源极,漏极) | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 输出电流流向 | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | 无铅 | |||||||||||||||||||||||||||||
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![]() | ISL6614ACBZ | Renesas Electronics America Inc. | 数据表 | 6 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | ISL6614A | 14 | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX620CWN | Maxim Integrated | 数据表 | 98 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 18-SOIC (0.295, 7.50mm Width) | YES | 18 | 0.8V 2.4V | High-Side | 0°C~70°C TA | Tube | 1996 | e3 | yes | 活跃 | 1 (Unlimited) | 18 | EAR99 | TIN | 4.5V~16.5V | DUAL | 鸥翼 | 260 | 4 | 5V | 1.27mm | 未说明 | MAX620 | 18 | 不合格 | Non-Inverting | 1.7μs 2.5μs | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | 0.025A | N-Channel MOSFET | YES | 2.65mm | 11.55mm | 7.5mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL6208IBZ | Renesas Electronics America Inc. | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 0.5V 2V | Commercial grade | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) - annealed | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2EDF7235KXUMA1 | Infineon Technologies | 数据表 | 22 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 13-TFLGA | YES | Half-Bridge | 1.2V 2V | -40°C~150°C TJ | Tape & Reel (TR) | EiceDriver™ | 活跃 | 3 (168 Hours) | 13 | 3V~3.5V | BOTTOM | BUTT | 未说明 | 1 | 3.3V | 0.65mm | 未说明 | S-PBGA-B13 | Non-Inverting | 6.5ns 4.5ns | Independent | 2 | 0.044 µs | N-Channel, P-Channel MOSFET | 4A 8A | YES | 0.044 µs | 1.06mm | 5mm | 5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2EDS8265HXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | 1.2V 2V | -40°C~150°C TJ | Tape & Reel (TR) | EiceDriver™ | 活跃 | 3 (168 Hours) | 16 | 3V~3.5V | DUAL | 鸥翼 | 未说明 | 1 | 3.3V | 未说明 | R-PDSO-G16 | Non-Inverting | 6.5ns 4.5ns | Independent | 2 | 0.044 µs | 12V | N-Channel, P-Channel MOSFET | 4A 8A | YES | 0.044 µs | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2EDS8165HXUMA1 | Infineon Technologies | 数据表 | 35 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | 1.2V 2V | -40°C~150°C TJ | Tape & Reel (TR) | EiceDriver™ | 活跃 | 3 (168 Hours) | 16 | 3V~3.5V | DUAL | 鸥翼 | 未说明 | 1 | 3.3V | 未说明 | R-PDSO-G16 | Non-Inverting | 6.5ns 4.5ns | Independent | 2 | 0.044 µs | N-Channel, P-Channel MOSFET | 1A 2A | YES | 0.044 µs | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HIP6601BCBZ | Renesas Electronics America Inc. | 数据表 | 1183 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | 8 | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS2128PBF | Infineon Technologies | 数据表 | 1343 In Stock | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 8-DIP (0.300, 7.62mm) | NO | High-Side | 0.8V 2.5V | -40°C~150°C TJ | Tube | 1996 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 12V~20V | DUAL | 未说明 | 1 | 15V | 2.54mm | compliant | 未说明 | IRS2128PBF | R-PDIP-T8 | 不合格 | Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 µs | 0.6A | IGBT, N-Channel MOSFET | 290mA 600mA | YES | 0.2 µs | 600V | 5.33mm | 9.88mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL6612AIBZ | Renesas Electronics America Inc. | 数据表 | 2250 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 5 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX4426CPA | Maxim Integrated | 数据表 | 280 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Low-Side | 0.8V 2.4V | 0°C~70°C TA | Tube | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~18V | DUAL | 260 | 2 | 未说明 | MAX4426 | 8 | 不合格 | 1 | Inverting | TOTEM-POLE | INVERTED | STANDARD | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.04 μs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | NO | 0.06 μs | 9.375mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IR2131STRPBF | Infineon Technologies | 数据表 | 60 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | 0.8V 2.2V | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 8542.39.00.01 | 10V~20V | DUAL | 鸥翼 | 260 | 3 | 15V | 1.27mm | 30 | IR2131SPBF | R-PDSO-G28 | 不合格 | Inverting | 80ns 40ns | Independent | 6 | 2 µs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 1 µs | 600V | 17.9mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ICL7667CBAZA-T | Renesas Electronics America Inc. | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2V | Commercial grade | 0°C~70°C TA | Cut Tape (CT) | 1999 | 活跃 | 1 (Unlimited) | 8 | 4.5V~15V | DUAL | 鸥翼 | 2 | ICL7667 | 8 | R-PDSO-G8 | Inverting | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EL7212CSZ-T7 | Renesas Electronics America Inc. | 数据表 | 1858 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Cut Tape (CT) | 2002 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7212 | 8 | R-PDSO-G8 | Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LT1161ISW#PBF | Linear Technology/Analog Devices | 数据表 | 43 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 20-SOIC (0.295, 7.50mm Width) | YES | High-Side | 0.8V 2V | -40°C~150°C TJ | Tube | 2006 | e3 | 活跃 | 1 (Unlimited) | 20 | EAR99 | Matte Tin (Sn) | 8V~48V | DUAL | 鸥翼 | 260 | 4 | 24V | 1.27mm | 30 | LT1161 | 20 | R-PDSO-G20 | 不合格 | 6.5mA | Non-Inverting | TRUE | GATED | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | N-Channel MOSFET | YES | 200 µs | 12.8015mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LTC4444EMS8E-5#PBF | Linear Technology/Analog Devices | 数据表 | 1639 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | YES | Half-Bridge | 1.85V 3.25V | -40°C~125°C TJ | Tube | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~13.5V | DUAL | 鸥翼 | 260 | 1 | 6V | 0.65mm | 30 | LTC4444 | 8 | S-PDSO-G8 | 不合格 | 6V | Non-Inverting | 8ns 5ns | Independent | 2 | 0.06 µs | 1.4A | N-Channel MOSFET | 2.5A 3A | YES | 0.045 µs | 114V | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX17603ATA T | Maxim Integrated | 数据表 | 2255 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | 2V 4.25V | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | EAR99 | 1.904W | 4V~14V | MAX17603 | 4A | Inverting | 40ns 25ns | 基于半桥的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EL7155CSZ | Renesas Electronics America Inc. | 数据表 | 1000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 0.8V 2.4V | Industrial grade | High-Side or Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 4.5V~16.5V | 未说明 | 未说明 | EL7155 | 8 | 16.5V | Non-Inverting | 14.5ns 15ns | 基于半桥的外设驱动器 | Synchronous | 2 | IGBT | 3.5A 3.5A | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL2100AAR3Z | Renesas Electronics America Inc. | 数据表 | 1650 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 9-VFDFN Exposed Pad | 3.7V 7.4V | Industrial grade | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 2 (1 Year) | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | 未说明 | 未说明 | ISL2100A | 9 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LTC4444IMS8E-5#PBF | Linear Technology/Analog Devices | 数据表 | 1390 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | YES | Half-Bridge | 1.85V 3.25V | -40°C~125°C TJ | Tube | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~13.5V | DUAL | 鸥翼 | 260 | 1 | 6V | 0.65mm | 30 | LTC4444 | 8 | S-PDSO-G8 | 不合格 | 6V | Non-Inverting | 8ns 5ns | Independent | 2 | 0.06 µs | 1.4A | N-Channel MOSFET | 2.5A 3A | YES | 0.045 µs | 114V | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL6208BIRZ-T | Renesas Electronics America Inc. | 数据表 | 20 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | 0.5V 2V | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | 哑光锡 | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRS2008SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2.5V | -40°C~150°C TJ | Tube | 2006 | 活跃 | 2 (1 Year) | 8 | EAR99 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | R-PDSO-G8 | Non-Inverting | TRUE | 触发器 | 70ns 30ns | Synchronous | 2 | 0.87 μs | N-Channel MOSFET | 290mA 600mA | YES | 200V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX4427CPA | Maxim Integrated | 数据表 | 45 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | 0.8V 2.4V | Low-Side | 0°C~70°C TA | Tube | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~18V | DUAL | 260 | 2 | 未说明 | MAX4427 | 8 | 不合格 | Non-Inverting | TOTEM-POLE | TRUE | STANDARD | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 0.04 µs | 1.5A | N-Channel, P-Channel MOSFET | 1.5A 1.5A | NO | 0.06 µs | 9.375mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LT1160CS#PBF | Linear Technology/Analog Devices | 数据表 | 801 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0.8V 2V | 0°C~125°C TJ | Tube | 1997 | e3 | 活跃 | 1 (Unlimited) | 14 | EAR99 | Matte Tin (Sn) | 10V~15V | DUAL | 鸥翼 | 260 | 1 | 12V | 30 | LT1160 | 14 | R-PDSO-G14 | 不合格 | Non-Inverting | TOTEM-POLE | TRUE | 触发器 | 130ns 60ns | Independent | 2 | 0.5 µs | 1.5A | N-Channel MOSFET | 1.5A 1.5A | YES | 0.6 µs | 60V | 1.75mm | 8.65mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI9912DY | Vishay | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8 | 506.605978 mg | EAR99 | 高低侧 | Non-Inverting|Inverting | 半桥 | Synchronous | 1000 | 30(Typ) | TTL|CMOS | 4.5 | 5.5 | 9(Typ) | 3(Max) | 1 | 830 | -40 | 85 | Industrial | 欠压锁定 | SOP | SOIC N | 表面贴装 | 1.55(Max) | 5(Max) | 4(Max) | 8 | Gull-wing | Compliant | Bulk | Obsolete | MOSFET | 85 °C | -40 °C | 830 mW | 1 MHz | 8 | 2 | 1 A | 5.5 V | 4.5 V | 9 mA | 830 mW | -40 mA | 30 ns | 2 | RoHS non-compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRS4427S | Infineon Technologies | 数据表 | 489 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 0.8V 2.5V | Automotive grade | Low-Side | -40°C~150°C TJ | Tube | 2012 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 6V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | compliant | 未说明 | AUIRS4427S | R-PDSO-G8 | 不合格 | 15V | Non-Inverting | 25ns 25ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | 0.095 μs | IGBT, N-Channel, P-Channel MOSFET | 2.3A 3.3A | 0.095 μs | TRANSIENT | SINK | 1.75mm | 4.9mm | 3.9mm | 符合RoHS标准 |
ISL6614ACBZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
25.470725
MAX620CWN
Maxim Integrated
分类:PMIC - Gate Drivers
ISL6208IBZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
15.131491
2EDF7235KXUMA1
Infineon Technologies
分类:PMIC - Gate Drivers
2EDS8265HXUMA1
Infineon Technologies
分类:PMIC - Gate Drivers
2EDS8165HXUMA1
Infineon Technologies
分类:PMIC - Gate Drivers
HIP6601BCBZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
IRS2128PBF
Infineon Technologies
分类:PMIC - Gate Drivers
ISL6612AIBZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
31.917049
MAX4426CPA
Maxim Integrated
分类:PMIC - Gate Drivers
IR2131STRPBF
Infineon Technologies
分类:PMIC - Gate Drivers
ICL7667CBAZA-T
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
EL7212CSZ-T7
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
LT1161ISW#PBF
Linear Technology/Analog Devices
分类:PMIC - Gate Drivers
LTC4444EMS8E-5#PBF
Linear Technology/Analog Devices
分类:PMIC - Gate Drivers
MAX17603ATA T
Maxim Integrated
分类:PMIC - Gate Drivers
EL7155CSZ
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
105.742133
ISL2100AAR3Z
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
40.234638
LTC4444IMS8E-5#PBF
Linear Technology/Analog Devices
分类:PMIC - Gate Drivers
ISL6208BIRZ-T
Renesas Electronics America Inc.
分类:PMIC - Gate Drivers
11.045989
IRS2008SPBF
Infineon Technologies
分类:PMIC - Gate Drivers
MAX4427CPA
Maxim Integrated
分类:PMIC - Gate Drivers
LT1160CS#PBF
Linear Technology/Analog Devices
分类:PMIC - Gate Drivers
SI9912DY
Vishay
分类:PMIC - Gate Drivers
AUIRS4427S
Infineon Technologies
分类:PMIC - Gate Drivers
