类别是'category.内存模块' (5401)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 表面安装 | 材料 | Housing material | 终端数量 | Additionally | Case | Date Of Intro | Dielectric strength | Dimension X | Dimension Y | Dimension Z | Electrical mounting | Enclosure description | Enclosure series | Enclosures application | Gate current | Glue stick diameter mm | Gross weight | Head and button shape | Heating time | Illuation color | Illumination voltage | Indicator type | LED lifespan | Max. forward impulse current | Max. forward voltage | Max. off-state voltage | Mechanical mounting | Mounting diameter | Noal voltage | Number of switching cycles (electrical) | Relative humidity | Semiconductor structure | Shrinkage diameter after | Shrinkage diameter before | Shrinkage temperature | Switching cycles (electrical) | Switching scheme | Thickness after shrinkage | Transport package size/quantity | Transport packaging size / quantity | Transport packaging size/quantity | Type of enclosure | Type of module | Useful height (B) | 包装 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 颜色 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | Contact resistance | 温度等级 | 电源电压-最小值(Vsup) | Insulation resistance | 操作模式 | 电源电流-最大值 | Switch type | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | Operating temperature range | 待机电流-最大值 | Rated current | 记忆密度 | 筛选水平 | 并行/串行 | 内存IC类型 | 编程电压 | Shrinkage ratio | 串行总线类型 | Load current | 耐力 | 电源 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 饱和电流 | 特征 | Operating voltage | 触点 | IP rating | 直径 | 长度 | 宽度 | 器件厚度 | ||||||||||||||||||||||||
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![]() | M29DW127G70NF6E | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | SEMIPACK3 | NUMONYX | screw | BGA, BGA64,8X8,40 | 150mA | 410 g | 70 ns | 9.5kA | 1.45V | 1.8kV | screw | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA64,8X8,40 | SQUARE | 网格排列 | 有 | Transferred | double series | diode-thyristor | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 1 mm | unknown | S-PBGA-B64 | 不合格 | INDUSTRIAL | 0.015 mA | 8MX16 | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 320A | 8 | YES | YES | YES | 8,62 | 64K,256K | 8/16 words | YES | BOTTOM/TOP | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NAND512W3A2DZA6E | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 63 | 64000000 | 54.6mm | 85mm | 38.6mm | 85 °C | EMI/RFI shielding, | -40 °C | AW | designed for electronic circuits sensitive to electromagnetic interferences | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 12000 ns | 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 | BGA | NUMONYX | Obsolete | 有 | See | with fixing lugs | aluminium | 3 V | 67108864 words | shielding | 有 | EAR99 | SLC NAND类型 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 63 | R-PBGA-B63 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 64MX8 | 1.05 mm | 8 | 0.00005 A | 536870912 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 4K | 16K | 512 words | YES | IP68 | 11 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB021E-SSHN-T | Atmel Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | SOIC | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 | 70 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 1.8 V | Transferred | ATMEL CORP | e4 | EAR99 | NOR型号 | 镍钯金 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 3.6 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 2MX1 | 1.75 mm | 1 | 2097152 bit | SERIAL | FLASH | 2.7 V | 4.925 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB041E-SSHN-T | Atmel Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | ATMEL CORP | SOIC | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 | 70 MHz | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | 小概要 | 3 V | 有 | Transferred | e4 | EAR99 | NOR型号 | 镍钯金 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 3.6 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.026 mA | 4MX1 | 1.75 mm | 1 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.925 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29W128GL70ZA6E | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | NUMONYX | BGA | TBGA, BGA64,8X8,40 | 70 ns | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | 3 V | 有 | Transferred | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 1 mm | unknown | 未说明 | 64 | R-PBGA-B64 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8MX16 | 1.2 mm | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TE28F128P30T85 | Micron Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 56 | 14 X 20 MM, TSOP-56 | 88 ns | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1.8 V | Obsolete | MICRON TECHNOLOGY INC | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G56 | 2 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 8MX16 | 1.2 mm | 16 | 134217728 bit | PARALLEL | FLASH | 1.8 V | TOP | 18.4 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TE28F128P30T85 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 56 | NUMONYX | TSOP | TSSOP, TSSOP56,.8,20 | 88 ns | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1.8 V | 无 | Transferred | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | 56 | R-PDSO-G56 | 不合格 | 2 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.028 mA | 8MX16 | 1.2 mm | 16 | 0.000075 A | 134217728 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,127 | 16K,64K | 4 words | TOP | YES | 1 | 18.4 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25WF020-40-4I-SAF | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | SILICON STORAGE TECHNOLOGY INC | SOIC | 0.150 INCH, SOIC-8 | 40 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | 小概要 | 1.8 V | 有 | Transferred | e4 | EAR99 | NOR型号 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | unknown | 40 | 8 | R-PDSO-G8 | 不合格 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 256KX8 | 3-STATE | 1.75 mm | 8 | 2097152 bit | SERIAL | FLASH | 1.8 V | SPI | 100 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RC28F256P33TF | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | NUMONYX | BGA | BGA-64 | 95 ns | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | 3 V | 无 | Transferred | EAR99 | NOR型号 | 异步读取模式 | 8542.32.00.51 | BOTTOM | BALL | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | 不合格 | 3.6 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.031 mA | 16MX16 | 1.2 mm | 16 | 0.00021 A | 268435456 bit | PARALLEL | FLASH | 2.7 V | NO | NO | YES | 4,255 | 16K,64K | TOP | YES | 13 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W25X40CVUXAG | Winbond Electronics Corp | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | WINBOND ELECTRONICS CORP | USON-8 | 80 MHz | 524288 words | 512000 | 105 °C | -40 °C | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3 V | 有 | 活跃 | EAR99 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 0.5 mm | compliant | 未说明 | R-PDSO-N8 | 3.6 V | INDUSTRIAL | 2.6 V | SYNCHRONOUS | 512KX8 | 3-STATE | 0.6 mm | 8 | 4194304 bit | AEC-Q100 | SERIAL | FLASH | 3 V | 3 mm | 2 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EN25T16A-75QIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 8 | DIP, | 75 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 3 V | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 2MX8 | 5.334 mm | 8 | 16777216 bit | SERIAL | FLASH | 2.7 V | 9.271 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB321E-MHF-Y | Dialog Semiconductor GmbH | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | Polyolefin | 8 | DIALOG SEMICONDUCTOR GMBH | 70 MHz | 8.80 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3 V | 有 | Transferred | 3.0 mm | 6.0 mm | +80...+120 °C | 0.53 mm | 105*20*16/500 | e4 | Трубка термоусадочная неподдерживающая горение | 镍钯金 | Blue | DUAL | 无铅 | 1 | 1.27 mm | compliant | R-PDSO-N8 | 不合格 | 3.6 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.022 mA | 32MX1 | 0.6 mm | 1 | -55...+125 °C | 0.000001 A | 33554432 bit | SERIAL | FLASH | 2.7 V | 2 : 1 | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 600 V | 1 m | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29F400FB55N3E2 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | NUMONYX | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP1-48 | 55 ns | 262144 words | 256000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 有 | Transferred | EAR99 | NOR型号 | 底部启动区块 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 0.5 mm | unknown | 未说明 | 48 | R-PDSO-G48 | 不合格 | 5.5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX16 | 1.2 mm | 16 | 0.00012 A | 4194304 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NAND01GW3B2CZA6 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 63 | BGA | TFBGA, | 35 ns | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | Transferred | NUMONYX | e0 | EAR99 | 锡铅 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 63 | R-PBGA-B63 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 128MX8 | 1.05 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 3 V | 12 mm | 9.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | F50L1G41LB-104YG2M | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | 2017-08-18 | 104 MHz | 11 | 285.00 | 1…3 min | 134217728 words | 220V, 50Hzmin | 128000000 | 70 °C | UNSPECIFIED | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3.3 V | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 48*31.5*27/20 | , | Blister | EAR99 | SLC NAND类型 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-XDSO-N8 | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX8 | 3-STATE | 0.8 mm | 8 | 0.00005 A | 1073741824 bit | SERIAL | FLASH | 3.3 V | SPI | 100000 Write/Erase Cycles | 100W | 10 | HARDWARE/SOFTWARE | 1 | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EN25QH16A-104GIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | nickel-plated brass | 8 | 2000 (50 Hz / 5 s) V | SOP, | 104 MHz | 33.40 | ring - cone; key cover | 2097152 words | 19 mm | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 3 V | IP65 | 250 V | Obsolete | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 45...85 % | ≥50000 | ON-ON - 2 positions with 1NO1NC fixation | 62*27.5*28/200 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-G8 | 3.6 V | ≤50 mΩ | INDUSTRIAL | 2.7 V | ≥1000 MΩ | SYNCHRONOUS | LAS1 AGQ-Y series vandal-resistant key switch | 2MX8 | 1.75 mm | 8 | -25…+55 °C | 5 A | 16777216 bit | SERIAL | FLASH | 2.7 V | BOTTOM/TOP | 3Pin | 22 mm | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB021E-SHN-T | Atmel Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | nickel-plated brass | 8 | 2000 (50 Hz / 5 s) V | Transferred | ATMEL CORP | 21.20 | ring - cone; flat button | SOIC | greemin | 12 V | "ON" pictogram | ≥40000 hours | 19 mm | 0.208 INCH, GREEN, PLASTIC, EIAJ, SOIC-8 | ≥50000 | 70 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 1.8 V | IP65 | 250 V | 45...85 % | 有 | ON-(ON) without locking | 27.5*27*19/100 | e4 | EAR99 | NOR型号 | 镍钯金 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 3.6 V | ≤50 mΩ | INDUSTRIAL | 1.65 V | ≥1000 MΩ | SYNCHRONOUS | Vandal resistant pushbutton switch LAS1-AGQ series with illumination | 2MX1 | 2.16 mm | 1 | -25…+55 °C | 5 A | 2097152 bit | SERIAL | FLASH | 2.7 V | 3Pin+2Pin | 22 mm | 5.29 mm | 5.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25SF321-SHD-T | Dialog Semiconductor GmbH | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 有 | Transferred | DIALOG SEMICONDUCTOR GMBH | compliant | FLASH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | THGBMNG5D1LBAIT | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | polyethylene | 153 | with a red stripe | 2019-01-21 | 1.25 | 4000000000 | 85 °C | -25 °C | PLASTIC/EPOXY | BGA | RECTANGULAR | 网格排列 | Transferred | TOSHIBA CORP | WFBGA-153 | 4294967296 words | 48*31.5*22/15000 | 100 mm | EAR99 | PE bag with zip lock | transparent | 8542.32.00.51 | BOTTOM | BALL | 1 | unknown | R-PBGA-B153 | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 4GX8 | 8 | 34359738368 bit | SERIAL | FLASH | 2.7 V | zip-lock | 100 mm | 45 μm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF6401B-70-4I-EKE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | SILICON STORAGE TECHNOLOGY INC | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48 | 70 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3 V | 有 | Transferred | e3 | 有 | EAR99 | NOR型号 | Matte Tin (Sn) | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | unknown | 40 | 48 | R-PDSO-G48 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 4MX16 | 1.2 mm | 16 | 0.00002 A | 67108864 bit | PARALLEL | FLASH | 2.7 V | YES | YES | YES | 2K | 2K | BOTTOM | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | P25Q128H-SUH-IT | PUYA) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tube-packed | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | P24C64C-TSH-MIR | PUYA) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tape & Reel (TR) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | P25Q40U-TSH-IR | PUYA) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tape & Reel (TR) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | K3QF3F30BM-AGCG | Samsung | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tape & Reel (TR) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | K3UH7H70AM-EGCL | Samsung | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tape & Reel (TR) |
M29DW127G70NF6E
Numonyx Memory Solutions
分类:Memory - Modules
NAND512W3A2DZA6E
Numonyx Memory Solutions
分类:Memory - Modules
AT45DB021E-SSHN-T
Atmel Corporation
分类:Memory - Modules
AT45DB041E-SSHN-T
Atmel Corporation
分类:Memory - Modules
M29W128GL70ZA6E
Numonyx Memory Solutions
分类:Memory - Modules
TE28F128P30T85
Micron Technology Inc
分类:Memory - Modules
TE28F128P30T85
Numonyx Memory Solutions
分类:Memory - Modules
SST25WF020-40-4I-SAF
Silicon Storage Technology
分类:Memory - Modules
RC28F256P33TF
Numonyx Memory Solutions
分类:Memory - Modules
W25X40CVUXAG
Winbond Electronics Corp
分类:Memory - Modules
EN25T16A-75QIP
Elite Semiconductor Memory Technology Inc
分类:Memory - Modules
AT45DB321E-MHF-Y
Dialog Semiconductor GmbH
分类:Memory - Modules
M29F400FB55N3E2
Numonyx Memory Solutions
分类:Memory - Modules
NAND01GW3B2CZA6
Numonyx Memory Solutions
分类:Memory - Modules
F50L1G41LB-104YG2M
Elite Semiconductor Memory Technology Inc
分类:Memory - Modules
EN25QH16A-104GIP
Elite Semiconductor Memory Technology Inc
分类:Memory - Modules
AT45DB021E-SHN-T
Atmel Corporation
分类:Memory - Modules
AT25SF321-SHD-T
Dialog Semiconductor GmbH
分类:Memory - Modules
THGBMNG5D1LBAIT
Toshiba America Electronic Components
分类:Memory - Modules
SST39VF6401B-70-4I-EKE
Silicon Storage Technology
分类:Memory - Modules
P25Q128H-SUH-IT
PUYA)
分类:Memory - Modules
P24C64C-TSH-MIR
PUYA)
分类:Memory - Modules
P25Q40U-TSH-IR
PUYA)
分类:Memory - Modules
K3QF3F30BM-AGCG
Samsung
分类:Memory - Modules
K3UH7H70AM-EGCL
Samsung
分类:Memory - Modules
