N/A

-

底座安装

Module

AG-ECONO2B

1.5V

50 A

Infineon Technologies

Infineon

Infineon Technologies

1200 V

Tray

活跃

50 A

20V

1200 V

-

+ 175 C

- 40 C

10

PCB 安装

FP50R12N2T7P SP005407056

-40°C ~ 175°C (TJ)

IGBTs

三相逆变器

-

20 mW

三相桥式整流器

IGBT模块

4 μA

1200 V

1.85V @ 15V, 25A

50A

沟渠现场停车

有

11.1 nF @ 25 V

IGBT硅模块

IGBT模块

N/A

-

底座安装

SOT-227-4, miniBLOC

SOT-227

2.39 V

68 A

Vishay General Semiconductor - Diodes Division

Tube

活跃

68 A

- 20 V, + 20 V

291 W

+ 150 C

- 40 C

160

螺钉安装

Vishay

Vishay Semiconductors

Details

1.2 kV

-40°C ~ 150°C (TJ)

Tube

-

IGBTs

Si

单斩波器

291 W

Standard

IGBT晶体管

50 μA

1200 V

2.8V @ 15V, 50A

沟渠现场停车

无

IGBT晶体管

N/A

-

底座安装

Module

-

2.4 V

160 A

微芯片技术

Bulk

活跃

160 A

MSCGLQ

20 V

470 W

+ 175 C

- 55 C

1

Screw

Microchip

Microchip Technology / Atmel

1200 V

-55°C ~ 175°C (TJ)

-

IGBTs

Si

全桥

470 W

Standard

IGBT模块

50 μA

1200 V

2.4V @ 15V, 75A

-

有

4.4 nF @ 25 V

IGBT硅模块

IGBT模块

N/A

-

底座安装

Module

42-PIM/Q2PACK (93x47)

1.63

303 A, 298 A

onsemi

- 40 C

12

onsemi

onsemi

Details

1000 V

Tray

活跃

303 A

NXH350

±20V

Q2PACK (Pb-Free/Halide-Free)

1000 V

592 W, 731 W

+ 150 C

-40°C ~ 150°C (TJ)

Tray

-

IGBTs

三级逆变器

592

276 W

Standard

IGBT模块

1 mA

1000 V

2.3V @ 15V, 375A

303

沟渠现场停车

有

24.146 nF @ 20 V

IGBT硅模块

IGBT模块

N/A

-

底座安装

Module

22-PIM/Q0BOOST (55x32.5)

onsemi

Tray

活跃

Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

38A

118 W

+ 150 C

- 40 C

24

onsemi

onsemi

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

双升压斩波器

118W

118 W

Standard

Discrete Semiconductor Modules

Dual N Channel

-

-

有

3.227 nF @ 20 V

IGBT碳化硅模块

Discrete Semiconductor Modules

N/A

-

底座安装

Module

AG-EASY2B

Infineon Technologies

Tape & Reel (TR)

活跃

15

FP25R12N2T7_B80 SP005341978

Infineon

Infineon Technologies

-

Tray

IGBTs

-

Standard

IGBT模块

-

沟渠现场停车

无

IGBT硅模块

IGBT模块

N/A

-

1.82 V

10 A

Infineon Technologies

Tape & Reel (TR)

活跃

20 mW

+ 150 C

- 40 C

30

底座安装

FP10R12W1T7P SP005630624

Infineon

Infineon Technologies

1200 V

Tray

-

IGBTs

PIM

IGBT模块

IGBT硅模块

IGBT模块

N/A

-

Infineon Technologies

30

F4-17MR12W1M1HP_B76 SP005634561

Infineon

Infineon Technologies

Tape & Reel (TR)

活跃

Tray

-

MOSFETs

MOSFET

MOSFET

N/A

-

底座安装

DO-200AE

BG-P16826K-1

Infineon Technologies

P3000ZL45X168APT SP005742881

Infineon

Infineon Technologies

Details

Tray

活跃

3000 A

1

-40°C ~ 150°C (TJ)

Tray

-

IGBTs

Single

Standard

IGBT模块

200 μA

4500 V

2.5V @ 15V, 3000A

Trench

无

620 nF @ 25 V

IGBT模块

N/A

-

底座安装

Module

AG-62MM

1.75 V

Infineon Technologies

Tray

活跃

800 A

10

FF800R12KE7 SP005432766

Infineon

Infineon Technologies

Details

+ 175 C

- 40 C

底座安装

1.2 kV

-40°C ~ 175°C (TJ)

Tray

IGBTs

半桥

Standard

IGBT模块

100 μA

1200 V

1.75V @ 15V, 800A

沟渠现场停车

无

122 nF @ 25 V

IGBT硅模块

IGBT模块

N/A

-

底座安装

Module

AG-EASY4B

Infineon Technologies

F3L600R10W4S7F_C22 SP005434947

Infineon

Infineon Technologies

Details

Tray

活跃

310 A

6

-40°C ~ 150°C (TJ)

Tray

IGBTs

三级逆变器

20 mW

Standard

IGBT模块

1 mA

950 V

2.25V @ 15V, 400A

沟渠现场停车

有

49.2 nF @ 25 V

IGBT模块

N/A

-

EMIPAK

Vishay General Semiconductor - Diodes Division

Box

活跃

650 V

650 V

12 ns

2.9 V

139 W

N-Channel

+ 150 C

- 20 V, + 20 V

100

压装

Vishay

Vishay Semiconductors

80 mOhms

Details

82 ns

29 A

Bulk

*

PressFit Power Module

Discrete Semiconductor Modules

SiC

1-Phase Bridge

9 ns

Discrete Semiconductor Modules

Diode Power Modules

1.52 V

Discrete Semiconductor Modules

N/A

-

Infineon Technologies

Tray

活跃

8

DF4-19MR20W3M1HF_B11 SP005677961

Infineon

Infineon Technologies

Details

Tray

*

Discrete Semiconductor Modules

Discrete Semiconductor Modules

Discrete Semiconductor Modules

N/A

-

EMIPAK

Vishay General Semiconductor - Diodes Division

活跃

600 V

600 V

2.7 V

173 W

N-Channel

+ 150 C

- 30 V, + 30 V

100

压装

Vishay

Vishay Semiconductors

Details

149 ns

48 mOhms

Box

Bulk

*

PressFit Power Module

Discrete Semiconductor Modules

1-Phase Bridge

Discrete Semiconductor Modules

Diode Power Modules

Discrete Semiconductor Modules

N/A

-

NO

7

SILICON

5.71

2

150 °C

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

300 ns

1000 ns

650 ns

800 ns

400 ns

BSM75GB170DN2

Obsolete

西门子 A G

FLANGE MOUNT, R-XUFM-X7

Dual

UPPER

UNSPECIFIED

unknown

R-XUFM-X7

不合格

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

ISOLATED

N-CHANNEL

110 A

1700 V

20 V

3.9 V

1250 W

140 ns

30.5 mm

N/A

-

NO

20

24

2.1 V

15 V

未说明

Compliant

IKCS08F60B2A

有

Obsolete

INFINEON TECHNOLOGIES AG

SIP

,

5.83

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

EAR99

125 °C

8542.39.00.01

30 W

ZIG-ZAG

THROUGH-HOLE

未说明

1

compliant

24/20

R-PZFM-T24

不合格

17.5 V

12.5 V

交流电机控制器

8 A

N/A

-

Production (Last Updated: 2 months ago)

底座安装

底座安装

SP3

3

SP3

微芯片技术

Bulk

50 A

APTCV60

活跃

1

Microchip

微芯片技术

Details

600 V

-40°C ~ 175°C (TJ)

Tube

-

Discrete Semiconductor Modules

250 W

Si

全桥逆变器

250 W

单相桥式整流器

Discrete Semiconductor Modules

1.9 V

50 A

250 µA

600 V

3.15 nF

1.9V @ 15V, 50A

沟渠现场停车

有

3.15 nF @ 25 V

Discrete Semiconductor Modules

N/A

-

底座安装

600 V

600 V

Compliant

682 W

283 A

Single

Standard

1.85 V

283 A

14.1 nF

无

无铅

N/A

-

底座安装

SP1

SP1

PEI-Genesis

Bulk

活跃

80 A

APTGT50

-40°C ~ 175°C (TJ)

*

不对称桥

176 W

Standard

250 µA

600 V

1.9V @ 15V, 50A

80

沟渠现场停车

有

3.15 nF @ 25 V

N/A

-

Chassis Mount, Screw

11

PEI-Genesis

活跃

1.2 kV

Compliant

Bulk

*

150 °C

-40 °C

1.4 kW

Single

Standard

1.2 kV

300 A

13 nF

无

N/A

-

表面贴装

64-LQFP

64-LQFP (12x12)

Infineon Technologies

Tray

MB90561

A/D 8x8/10b

Obsolete

51

-40°C ~ 85°C (TA)

F²MC-16LX MB90560

External

16MHz

1K x 8

3V ~ 5.5V

F²MC-16LX

POR, WDT

掩膜ROM

16-Bit

32KB (32K x 8)

UART/USART

-

N/A

-

Production (Last Updated: 2 months ago)

Chassis Mount, Screw

底座安装

SP4

4

SP4

1.7 V

75 A

微芯片技术

底座安装

1.2 kV

Bulk

75 A

APTGT50

活跃

1.2 kV

Compliant

277 W

+ 100 C

- 40 C

-40°C ~ 150°C (TJ)

-

277 W

Single

Single

277 W

Standard

2.1 V

75 A

250 µA

1200 V

3.6 nF

2.1V @ 15V, 50A

75

沟渠现场停车

有

3.6 nF @ 25 V

IGBT硅模块

无

N/A

-

底座安装

SP3

NO

SP3

25

SILICON

1.7

55 A

微芯片技术

610 ns

未说明

150 °C

有

APTGT35X120T3G

RECTANGULAR

6

活跃

MICROSEMI CORP

5.68

Bulk

55 A

APTGT35

活跃

20 V

208 W

+ 100 C

- 40 C

1

底座安装

Microchip

Microchip Technology / Atmel

Details

1200 V

FLANGE MOUNT, R-XUFM-X25

FLANGE MOUNT

1

UNSPECIFIED

140 ns

-40°C ~ 150°C (TJ)

Tube

-

e1

有

EAR99

锡银铜

IGBTs

Si

UPPER

UNSPECIFIED

未说明

compliant

25

R-XUFM-X25

不合格

三相逆变器

208

ISOLATED

208 W

MOTOR CONTROL

N-CHANNEL

Standard

IGBT模块

250 µA

1200 V

208 W

2.1V @ 15V, 35A

55 A

55

沟渠现场停车

1200 V

有

20 V

2.5 nF @ 25 V

2.1 V

IGBT硅模块

IGBT模块

N/A

-

Production (Last Updated: 1 month ago)

Chassis Mount, Screw

底座安装

D-3 Module

11

D3

1.8

610 A

微芯片技术

底座安装

1.2 kV

1.2 kV

Compliant

Bulk

610 A

APTGL475

活跃

2.08 kW

+ 125 C

- 40 C

-40°C ~ 175°C (TJ)

-

175 °C

-40 °C

2.08 kW

Single

Single

2.08

2080 W

Standard

1.2 kV

610 A

5 mA

1200 V

24.6 nF

2.2V @ 15V, 400A

610

沟渠现场停车

无

24.6 nF @ 25 V

IGBT硅模块

N/A

-

底座安装

NO

7

SILICON

Miscellaneous

1.7 kV

Compliant

FLANGE MOUNT, R-XUFM-X7

FLANGE MOUNT

1

UNSPECIFIED

330 ns

965 ns

未说明

150 °C

有

APTGT30A170D1G

RECTANGULAR

2

活跃

MICROSEMI CORP

5.22

MODULE

e1

有

Tin/Silver/Copper (Sn/Ag/Cu)

210 W

UPPER

UNSPECIFIED

未说明

compliant

7

R-XUFM-X7

不合格

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

ISOLATED

MOTOR CONTROL

N-CHANNEL

Standard

2.4 V

45 A

2.5 nF

45 A

1700 V

无