类别是'category.IGBT晶体管模块' (5134)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | Collector-Emitter Saturation Voltage | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 元素配置 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 晶体管应用 | 无卤素 | 极性/通道类型 | 输入 | 集电极发射器电压(VCEO) | 最大集电极电流 | 最大集极截止电流 | 电压 - 集射极击穿(最大值) | 输入电容 | 接通时间 | 不同 Vge、Ic 时 Vce(on)(最大值) | 关断时间-标准值(toff) | IGBT类型 | NTC热敏电阻 | 栅极-发射极电压-最大值 | 输入电容(Cies)@Vce | VCEsat-最大值 | 栅极-发射极Thr电压-最大值 | 高度 | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | APT200GN60JDQ4 | Microsemi Corporation | 数据表 | 1000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 25 Weeks | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | 30.000004g | SILICON | 600V | 1.5V | 1 | -55°C~175°C TJ | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 682W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 682W | 电源控制 | N-CHANNEL | Standard | 600V | 283A | 50μA | 14.1nF | 130 ns | 1.85V @ 15V, 200A | 660 ns | 沟渠现场停车 | 无 | 20V | 14.1nF @ 25V | 9.6mm | 38.2mm | 25.4mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | APTGT600U170D4G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | D4 | 4 | SILICON | 1.7kV | 1100A | 1 | -40°C~150°C TJ | 2012 | e1 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 锡银铜 | 雪崩 额定 | 2.9kW | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 2900W | 电源控制 | N-CHANNEL | Standard | 2.4V | 1.1kA | 1mA | 1700V | 51nF | 430 ns | 2.4V @ 15V, 600A | 1230 ns | 沟渠现场停车 | 无 | 20V | 51nF @ 25V | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | APTGT50SK170T1G | Microsemi Corporation | 数据表 | 55 In Stock | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP1 | 12 | SILICON | 1.7kV | 2V | 1 | -40°C~150°C TJ | 2012 | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 锡银铜 | 312W | UPPER | THROUGH-HOLE | 12 | Single | ISOLATED | 312W | MOTOR CONTROL | N-CHANNEL | Standard | 1.7kV | 75A | 250μA | 1700V | 4.4nF | 450 ns | 2.4V @ 15V, 50A | 1100 ns | 沟渠现场停车 | 有 | 20V | 4.4nF @ 25V | 2.4 V | 11.5mm | 51.6mm | 40.8mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | FF450R07ME4B11BOSA1 | Infineon Technologies | 数据表 | 2359 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 36 Weeks | 底座安装 | Module | 560A | -40°C~150°C | 2002 | 活跃 | 不适用 | EAR99 | 未说明 | 未说明 | 2 Independent | Dual | 1450W | 不含卤素 | Standard | 1mA | 650V | 1.95V @ 15V, 450A | 沟渠现场停车 | 有 | 27.5nF @ 25V | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FF600R07ME4B11BOSA1 | Infineon Technologies | 数据表 | 800 In Stock | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 底座安装 | Module | NO | SILICON | 700A | 2 | -40°C~150°C | 2002 | 活跃 | 不适用 | 11 | EAR99 | UL认证 | UPPER | UNSPECIFIED | 未说明 | 未说明 | R-XUFM-X11 | 2 Independent | Dual | ISOLATED | 1800W | 电源控制 | 不含卤素 | N-CHANNEL | Standard | 1mA | 650V | 250 ns | 1.95V @ 15V, 600A | 570 ns | 沟渠现场停车 | 有 | 37nF @ 25V | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
![]() | APTGT300SK60D3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | D-3 Module | 5 | 600V | 1 | 2011 | 活跃 | 1 (Unlimited) | 5 | EAR99 | 175°C | -40°C | 940W | UPPER | UNSPECIFIED | 11 | Single | ISOLATED | 电源控制 | N-CHANNEL | Standard | 600V | 400A | 500μA | 18.5nF | 190 ns | 1.9V @ 15V, 300A | 600 ns | 沟渠现场停车 | 无 | 20V | 18.5nF @ 25V | 1.9 V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||
![]() | APTGT50TL601G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP1 | 12 | SILICON | 600V | 4 | -40°C~175°C TJ | 2012 | 活跃 | 1 (Unlimited) | 10 | EAR99 | 176W | UPPER | UNSPECIFIED | 12 | R-XUFM-X10 | 三级逆变器 | ISOLATED | 176W | 电源控制 | N-CHANNEL | Standard | 600V | 80A | 250μA | 3.15nF | 170 ns | 1.9V @ 15V, 50A | 310 ns | 沟渠现场停车 | 无 | 20V | 3.15nF @ 25V | 1.9 V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
![]() | APT35GT120JU2 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | SILICON | 1.2kV | 1 | -55°C~150°C TJ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | AVALANCHE RATED, LOW CONDUCTION LOSS | 260W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 260W | 电源控制 | N-CHANNEL | Standard | 2.1V | 55A | 5mA | 1200V | 2.53nF | 135 ns | 2.1V @ 15V, 35A | 610 ns | 沟渠现场停车 | 无 | 20V | 2.53nF @ 25V | 符合RoHS标准 | |||||||||||||||||||||||||||||||
![]() | FP35R12KT4BOSA1 | Infineon Technologies | 数据表 | 3 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 底座安装 | Module | NO | 23 | SILICON | 35A | 7 | -40°C~150°C | 2002 | no | 活跃 | 不适用 | 23 | EAR99 | UPPER | UNSPECIFIED | 未说明 | 未说明 | 23 | 不合格 | 三相逆变器 | ISOLATED | 210W | 不含卤素 | N-CHANNEL | Standard | 1mA | 1200V | 210 ns | 2.25V @ 15V, 35A | 620 ns | 沟渠现场停车 | 有 | 2nF @ 25V | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
![]() | APT75GT120JU3 | Microsemi Corporation | 数据表 | 1000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | 30.000004g | SILICON | 1.7V | 1 | 1.2kV | -55°C~150°C TJ | 2006 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | AVALANCHE RATED, LOW CONDUCTION LOSS | 416W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 416W | 电源控制 | N-CHANNEL | Standard | 1.2kV | 100A | 5mA | 1200V | 5.34nF | 335 ns | 2.1V @ 15V, 75A | 610 ns | 沟渠现场停车 | 无 | 20V | 5.34nF @ 25V | 2.1 V | 9.6mm | 38.2mm | 25.4mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | APT75GP120JDQ3 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 33 Weeks | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | 30.000004g | SILICON | 1.2kV | 3.3V | 1 | -55°C~150°C TJ | 1999 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | LOW CONDUCTION LOSS, UL RECOGNIZED | 543W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 543W | MOTOR CONTROL | N-CHANNEL | Standard | 1.2kV | 128A | 1.25mA | 1200V | 7.04nF | 60 ns | 3.9V @ 15V, 75A | 360 ns | PT | 无 | 20V | 7.04nF @ 25V | 9.6mm | 38.2mm | 25.4mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
![]() | APTGT75DA60T1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SP1 | 1 | SILICON | 600V | 1 | -40°C~175°C TJ | 2007 | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | UPPER | THROUGH-HOLE | 未说明 | 未说明 | 12 | 不合格 | Single | ISOLATED | 250W | MOTOR CONTROL | N-CHANNEL | Standard | 1.9V | 100A | 250μA | 4.62nF | 170 ns | 1.9V @ 15V, 75A | 310 ns | 沟渠现场停车 | 有 | 4.62nF @ 25V | 符合RoHS标准 | ||||||||||||||||||||||||||||
![]() | APT100GT60JRDQ4 | Microsemi Corporation | 数据表 | 1250 In Stock | - | 最小起订量: 1 最小包装量: 1 | 25 Weeks | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | SILICON | 600V | 1 | -55°C~150°C TJ | 2001 | Thunderbolt IGBT® | 活跃 | 1 (Unlimited) | 4 | HIGH RELIABILITY, UL RECOGNIZED | 500W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 500W | 电源控制 | N-CHANNEL | Standard | 600V | 148A | 50μA | 5.15nF | 115 ns | 2.5V @ 15V, 100A | 450 ns | NPT | 无 | 30V | 5.15nF @ 25V | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
![]() | FS100R07N3E4B11BOSA1 | Infineon Technologies | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | NO | SILICON | 100A | 6 | -40°C~150°C | 2002 | Obsolete | 不适用 | 35 | EAR99 | UL认证 | UPPER | UNSPECIFIED | 未说明 | compliant | 未说明 | R-XUFM-X35 | 三相逆变器 | ISOLATED | 335W | 电源控制 | N-CHANNEL | Standard | 1mA | 650V | 100 ns | 1.95V @ 15V, 100A | 370 ns | 沟渠现场停车 | 有 | 6.2nF @ 25V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||
![]() | APTGT300TL60G | Microsemi Corporation | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 11 | SILICON | 600V | 4 | 225 ns | -40°C~175°C TJ | 2009 | 活跃 | 1 (Unlimited) | 12 | EAR99 | 935W | UPPER | UNSPECIFIED | 12 | R-XUFM-X12 | 三级逆变器 | ISOLATED | 115 ns | 935W | 电源控制 | N-CHANNEL | Standard | 600V | 400A | 350μA | 18.4nF | 180 ns | 1.9V @ 15V, 300A | 370 ns | 沟渠现场停车 | 无 | 20V | 18.4nF @ 25V | 1.9 V | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
![]() | APT100GT120JRDQ4 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 29 Weeks | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | SILICON | 1.2kV | 1 | -55°C~150°C TJ | 2001 | Thunderbolt IGBT® | 活跃 | 1 (Unlimited) | 4 | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | 570W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 570W | 电源控制 | N-CHANNEL | Standard | 1.2kV | 123A | 200μA | 1200V | 7.85nF | 150 ns | 3.7V @ 15V, 100A | 747 ns | NPT | 无 | 20V | 7.85nF @ 25V | 3.7 V | 符合RoHS标准 | ||||||||||||||||||||||||||||||
![]() | APTGT200DU120G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 7 | SILICON | 1.2kV | 2 | -40°C~150°C TJ | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 890W | UPPER | UNSPECIFIED | 7 | Dual, Common Source | Dual | ISOLATED | 890W | 电源控制 | N-CHANNEL | Standard | 1.2kV | 280A | 350μA | 1200V | 14nF | 340 ns | 2.1V @ 15V, 200A | 610 ns | 沟渠现场停车 | 无 | 14nF @ 25V | 符合RoHS标准 | |||||||||||||||||||||||||||||
![]() | APT75GT120JRDQ3 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 29 Weeks | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | SILICON | 1.2kV | 1 | -55°C~150°C TJ | 1999 | Thunderbolt IGBT® | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | UL 认证 | 480W | UPPER | UNSPECIFIED | 4 | Single | ISOLATED | 480W | 电源控制 | N-CHANNEL | Standard | 1.2kV | 97A | 200μA | 1200V | 5.1nF | 115 ns | 3.7V @ 15V, 75A | 444 ns | NPT | 无 | 5.1nF @ 25V | 符合RoHS标准 | |||||||||||||||||||||||||||||||
![]() | APTGFQ25H120T2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 29 Weeks | Screw, Through Hole | 通孔 | SP2 | 22 | 1.2kV | 1 | 2012 | 活跃 | 1 (Unlimited) | EAR99 | 150°C | -40°C | 227W | 全桥 | Standard | 1.2kV | 40A | 250μA | 1200V | 2.02nF | 2.1V @ 15V, 25A | NPT和现场止动 | 有 | 2.02nF @ 25V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | APT65GP60J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 2 Weeks | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | SILICON | 600V | 1 | -55°C~150°C TJ | 1999 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 4 | Tin/Silver/Copper (Sn/Ag/Cu) | 低导通损耗 | 600V | 431W | UPPER | UNSPECIFIED | 130A | 4 | Single | ISOLATED | 电源控制 | N-CHANNEL | Standard | 600V | 130A | 1mA | 7.4nF | 84 ns | 2.7V @ 15V, 65A | 219 ns | PT | 无 | 20V | 7.4nF @ 25V | 6V | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
![]() | FF450R12ME4B11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 底座安装 | Module | 675A | -40°C~150°C | Bulk | 2002 | 活跃 | 不适用 | EAR99 | 未说明 | 未说明 | 2 Independent | Dual | 2250W | 不含卤素 | Standard | 3mA | 1200V | 2.1V @ 15V, 450A | 沟渠现场停车 | 有 | 28nF @ 25V | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | APT40GP90JDQ2 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | Chassis Mount, Screw | 底座安装 | ISOTOP | 4 | SILICON | 900V | 1 | -55°C~150°C TJ | 1999 | POWER MOS 7® | yes | 不用于新设计 | 1 (Unlimited) | 4 | UL 认证 | 900V | 284W | UPPER | UNSPECIFIED | 100A | 4 | Single | ISOLATED | 284W | 电源控制 | N-CHANNEL | Standard | 900V | 64A | 350μA | 3.3nF | 37 ns | 3.9V @ 15V, 40A | 220 ns | PT | 无 | 3.3nF @ 25V | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
![]() | APTGT100DA60T1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP1 | 12 | SILICON | 600V | 1 | -40°C~175°C TJ | 2007 | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 锡银铜 | 340W | UPPER | THROUGH-HOLE | 未说明 | 未说明 | 12 | 不合格 | Single | ISOLATED | 340W | MOTOR CONTROL | N-CHANNEL | Standard | 600V | 150A | 250μA | 6.1nF | 180 ns | 1.9V @ 15V, 100A | 370 ns | 沟渠现场停车 | 有 | 20V | 6.1nF @ 25V | 1.9 V | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | APTGT300H60G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 12 | SILICON | 600V | 4 | -40°C~175°C TJ | 2012 | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 锡银铜 | 雪崩 额定 | 1.15kW | UPPER | UNSPECIFIED | 12 | 全桥逆变器 | ISOLATED | 1150W | 电源控制 | N-CHANNEL | Standard | 600V | 430A | 350μA | 24nF | 170 ns | 1.8V @ 15V, 300A | 320 ns | 沟渠现场停车 | 无 | 24nF @ 25V | 符合RoHS标准 | |||||||||||||||||||||||||||||||
![]() | APTGT400DU120G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 7 | SILICON | 1.2kV | 2 | -40°C~150°C TJ | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.785kW | UPPER | UNSPECIFIED | 7 | Dual, Common Source | Dual | ISOLATED | 1785W | 电源控制 | N-CHANNEL | Standard | 1.2kV | 560A | 750μA | 1200V | 28nF | 340 ns | 2.1V @ 15V, 400A | 610 ns | 沟渠现场停车 | 无 | 28nF @ 25V | 符合RoHS标准 |
APT200GN60JDQ4
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT600U170D4G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT50SK170T1G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
FF450R07ME4B11BOSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
866.211587
FF600R07ME4B11BOSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
APTGT300SK60D3G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT50TL601G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APT35GT120JU2
Microsemi Corporation
分类:Transistors - IGBTs - Modules
FP35R12KT4BOSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
321.164987
APT75GT120JU3
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APT75GP120JDQ3
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT75DA60T1G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APT100GT60JRDQ4
Microsemi Corporation
分类:Transistors - IGBTs - Modules
FS100R07N3E4B11BOSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
APTGT300TL60G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APT100GT120JRDQ4
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT200DU120G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APT75GT120JRDQ3
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGFQ25H120T2G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APT65GP60J
Microsemi Corporation
分类:Transistors - IGBTs - Modules
FF450R12ME4B11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
APT40GP90JDQ2
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT100DA60T1G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT300H60G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
APTGT400DU120G
Microsemi Corporation
分类:Transistors - IGBTs - Modules
