类别是'category.IGBT晶体管模块' (5134)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 安装类型 | 包装/外壳 | 供应商器件包装 | Average Gate Power Dissipation (PG(AV)) | Peak non-repetitive surge current (Itsm@f) | Peak Repetitive Off?State Voltage (Vdrm) | RMS On-State Current(It (rms)) | 操作温度 | 包装 | 系列 | 零件状态 | 配置 | 功率 - 最大 | 输入 | 最大集极截止电流 | 电压 - 集射极击穿(最大值) | 不同 Vge、Ic 时 Vce(on)(最大值) | SCR类型 | IGBT类型 | NTC热敏电阻 | 输入电容(Cies)@Vce | Vf-正向电压 | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BT136S | WEIDA | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 200mW | 30A@50Hz | 4A | true | Tape & Reel (TR) | Two-way thyristor | |||||||||||||||||||||||||||||||||
![]() | 97A8 | WEIDA | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 800V | 800mA | true | Tape & Reel (TR) | 1 bidirectional thyristor | |||||||||||||||||||||||||||||||||
![]() | 97A8 | Jiangsu JieJie Microelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Box-packed | true | Two-way thyristor | |||||||||||||||||||||||||||||||||||
![]() | SDM02M50DAS | Hangzhou Silan Microelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tube-packed | ||||||||||||||||||||||||||||||||||||
![]() | MCR100G-8-AD-AE3-R | UTC(Unisonic Tech) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tape & Reel (TR) | ||||||||||||||||||||||||||||||||||||
![]() | SPE05S60T-C | Jilin Sino-Microelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tube-packed | ||||||||||||||||||||||||||||||||||||
![]() | CAB7R5A23GM4T | Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 V | 压装 | - 40 C | 150 C | 150 A | 10 mW | 7.5 mOhms | 18 | 2.3 kV | 2.5 V | Half-Bridge | 5.8 V | ||||||||||||||||||||||||||
![]() | CAB6R0A23GM4 | Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 V | 压装 | - 40 C | 150 C | 150 A | 10 mW | 6 mOhms | 18 | 2.3 kV | 2.5 V | Half-Bridge | 5.8 V | ||||||||||||||||||||||||||
![]() | CAB7R5A23GM4 | Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 V | 压装 | - 40 C | 150 C | 150 A | 10 mW | 7.5 mOhms | 18 | 2.3 kV | 2.5 V | Half-Bridge | 5.8 V | ||||||||||||||||||||||||||
![]() | CAB5R0A23GM4T | Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 V | 压装 | - 40 C | 150 C | 150 A | 10 mW | 5 mOhms | 18 | 2.3 kV | 2.5 V | Half-Bridge | 5.8 V | ||||||||||||||||||||||||||
![]() | CAB5R0A23GM4 | Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 V | 压装 | - 40 C | 150 C | 150 A | 10 mW | 5 mOhms | 18 | 2.3 kV | 2.5 V | Half-Bridge | 5.8 V | ||||||||||||||||||||||||||
![]() | JX075F | Jiangsu JieJie Microelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tube-packed | ||||||||||||||||||||||||||||||||||||
![]() | SPE10S60F-A | Jilin Sino-Microelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | true | Tube-packed | ||||||||||||||||||||||||||||||||||||
VS-GP300TD60S | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK | 580 A | GP300 | -40°C ~ 150°C (TJ) | Tube | Obsolete | 半桥 | 1136 W | Standard | 150 µA | 600 V | 1.45V @ 15V, 300A | PT, Trench | 无 | |||||||||||||||||||||||
VS-GT200TS065N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | INT-A-PAK IGBT | 193 A | -40°C ~ 175°C (TJ) | Box | FRED Pt? | 活跃 | 半桥逆变器 | 517 W | Standard | 100 μA | 650 V | 2.3V @ 15V, 200A | Trench | 无 | |||||||||||||||||||||||
VS-GT105LA120UX | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | 134 A | GT105 | -40°C ~ 150°C (TJ) | Tube | Obsolete | Single | 463 W | Standard | 75 µA | 1200 V | NPT | 无 | ||||||||||||||||||||||||
VS-GB90DA60U | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4 | SOT-227 | 147 A | GB90 | -40°C ~ 150°C (TJ) | Tube | Obsolete | Single | 625 W | Standard | 100 µA | 600 V | 2.8V @ 15V, 100A | NPT | 无 | |||||||||||||||||||||||
VS-GB70LA60UF | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | 111 A | GB70 | -40°C ~ 150°C (TJ) | Bulk | Obsolete | Single | 447 W | Standard | 100 µA | 600 V | 2.44V @ 15V, 70A | NPT | 无 | |||||||||||||||||||||||
VS-GA100NA60UP | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | 100 A | GA100 | -55°C ~ 150°C (TJ) | Bulk | Obsolete | Single | 250 W | Standard | 250 µA | 600 V | 2.1V @ 15V, 50A | 无 | 7.4 nF @ 30 V | |||||||||||||||||||||||
VS-GB50YF120N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | ECONO2 4PACK | 66 A | GB50 | 150°C (TJ) | Bulk | Obsolete | 330 W | Standard | 250 µA | 1200 V | 4.5V @ 15V, 75A | 无 | |||||||||||||||||||||||||
VS-GA200SA60SP | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | GA200 | -55°C ~ 150°C (TJ) | Bulk | Obsolete | Single | 781 W | Standard | 1 mA | 600 V | 1.3V @ 15V, 100A | 无 | 16.25 nF @ 30 V | ||||||||||||||||||||||||
VS-GB100TP120N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | INT-A-Pak | INT-A-PAK | 200 A | GB100 | 150°C (TJ) | Bulk | Obsolete | 半桥 | 650 W | Standard | 5 mA | 1200 V | 2.2V @ 15V, 100A | 无 | 7.43 nF @ 25 V | |||||||||||||||||||||||
VS-ETF075Y60U | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | EMIPAK-2B | EMIPAK-2B | 100 A | ETF075 | 175°C (TJ) | Bulk | Obsolete | 三级逆变器 | 294 W | Standard | 100 µA | 600 V | 1.93V @ 15V, 75A | Trench | 有 | 4.44 nF @ 30 V | ||||||||||||||||||||||
VS-GB05XP120KTPBF | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | 12-MTP Module | MTP | 12 A | GB05 | -40°C ~ 150°C (TJ) | Bulk | 活跃 | 三相逆变器 | 76 W | Standard | 250 µA | 1200 V | 有 | |||||||||||||||||||||||||
VS-GB75SA120UP | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | GB75 | -40°C ~ 150°C (TJ) | Bulk | Obsolete | Single | 658 W | Standard | 250 µA | 1200 V | 3.8V @ 15V, 75A | NPT | 无 |
BT136S
WEIDA
分类:Transistors - IGBTs - Modules
97A8
WEIDA
分类:Transistors - IGBTs - Modules
97A8
Jiangsu JieJie Microelectronics
分类:Transistors - IGBTs - Modules
SDM02M50DAS
Hangzhou Silan Microelectronics
分类:Transistors - IGBTs - Modules
MCR100G-8-AD-AE3-R
UTC(Unisonic Tech)
分类:Transistors - IGBTs - Modules
SPE05S60T-C
Jilin Sino-Microelectronics
分类:Transistors - IGBTs - Modules
CAB7R5A23GM4T
Wolfspeed
分类:Transistors - IGBTs - Modules
CAB6R0A23GM4
Wolfspeed
分类:Transistors - IGBTs - Modules
CAB7R5A23GM4
Wolfspeed
分类:Transistors - IGBTs - Modules
CAB5R0A23GM4T
Wolfspeed
分类:Transistors - IGBTs - Modules
CAB5R0A23GM4
Wolfspeed
分类:Transistors - IGBTs - Modules
JX075F
Jiangsu JieJie Microelectronics
分类:Transistors - IGBTs - Modules
SPE10S60F-A
Jilin Sino-Microelectronics
分类:Transistors - IGBTs - Modules
VS-GP300TD60S
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GT200TS065N
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GT105LA120UX
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GB90DA60U
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GB70LA60UF
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GA100NA60UP
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GB50YF120N
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GA200SA60SP
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GB100TP120N
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-ETF075Y60U
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GB05XP120KTPBF
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
VS-GB75SA120UP
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
