类别是'category.IGBT晶体管模块' (5134)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 安装类型 | 包装/外壳 | 供应商器件包装 | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | 厂商 | 操作温度 | 包装 | 系列 | 类型 | 子类别 | 技术 | 配置 | 功率耗散 | 输出电流 | 功率 - 最大 | 上升时间 | 输入 | 产品类别 | 最大集极截止电流 | 电压 - 集射极击穿(最大值) | 不同 Vge、Ic 时 Vce(on)(最大值) | 连续集电极电流 | IGBT类型 | NTC热敏电阻 | 输入电容(Cies)@Vce | 产品 | Vf-正向电压 | 产品类别 | ||||||||||||||||||||||||||||
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FP200R12N3T7B80BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO3B | 1.55 V | 200 A | Infineon Technologies | 200 A | 20 V | 20 mW | + 175 C | - 40 C | 10 | PCB 安装 | FP200R12N3T7_B80 SP005342688 | Infineon | Infineon Technologies | 1200 V | Tape & Reel (TR) | 活跃 | -40°C ~ 175°C (TJ) | Tray | IGBTs | Si | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 5 μA | 1200 V | 1.55V @ 15V, 200A | 沟渠现场停车 | 有 | 40.3 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||||||
FP25R12N2T7B16BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-EASY2B | Infineon Technologies | FP25R12N2T7_B16 SP005354141 | Infineon | Infineon Technologies | Details | Tape & Reel (TR) | 活跃 | 15 | - | Tray | IGBTs | - | Standard | IGBT模块 | - | 沟渠现场停车 | 无 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||
P2000DE45X168HPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Infineon Technologies | Infineon | Infineon Technologies | Details | Tape & Reel (TR) | 活跃 | 1 | P2000DE45X168 SP005729514 | Tray | - | IGBTs | IGBT模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||||||||||
FP35R12N2T7B16BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | Infineon Technologies | Tape & Reel (TR) | 活跃 | 35 A | 15 | FP35R12N2T7_B16 SP005354148 | Infineon | Infineon Technologies | Details | -40°C ~ 175°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 7 μA | 1200 V | 1.6V @ 15V, 35A | 沟渠现场停车 | 有 | 6.62 nF @ 25 V | IGBT模块 | ||||||||||||||||||||||||||||||||||
NXH80T120L3Q0S3G | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 20-PIM/Q0PACK (55x32.5) | 1.7V | onsemi | 24 | onsemi | onsemi | Details | Tray | 活跃 | 75 A | ±20V | Q0PACK - Case 180AB (Pb-Free and Halide-Free) | 1200 V | -40°C ~ 175°C (TJ) | Tray | - | IGBTs | 半桥 | 188W | 188 W | Standard | IGBT模块 | 300 μA | 1200 V | 2.4V @ 15V, 80A | 75A | 沟渠现场停车 | 有 | 18.15 nF @ 20 V | IGBT模块 | ||||||||||||||||||||||||||||
NXH300B100H4Q2F2S1G | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 53-PIM/Q2PACK (93x47) | onsemi | Tray | 活跃 | 73 A | -40°C ~ 175°C (TJ) | - | Dual, Common Source | 194 W | Standard | 800 μA | 1118 V | 2.25V @ 15V, 100A | 沟渠现场停车 | 有 | 6.323 nF @ 20 V | ||||||||||||||||||||||||||||||||||||||||||
NXH40T120L3Q1PTG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 44-PIM (71x37.4) | onsemi | 21 | onsemi | onsemi | Details | Tray | 活跃 | 42 A | -40°C ~ 175°C (TJ) | Tray | - | IGBTs | 三相逆变器 | 146 W | Standard | IGBT模块 | 400 μA | 1200 V | 2.2V @ 15V, 40A | - | 有 | 7.753 nF @ 20 V | IGBT模块 | ||||||||||||||||||||||||||||||||||
VS-ENV020F65U | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | EMIPAK | Vishay General Semiconductor - Diodes Division | Box | 活跃 | 650 V | 68 W | N-Channel | + 175 C | 100 | 压装 | Vishay | Vishay Semiconductors | Details | Bulk | * | PressFit Power Module | Discrete Semiconductor Modules | 1-Phase Bridge | Discrete Semiconductor Modules | Diode Power Modules | 1.7 V | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||||||||||||
FS300R12N3E7BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | EconoPACK 3 | 1.5 V | Infineon Technologies | 活跃 | 10 | FS300R12N3E7 SP005558999 | Infineon | Infineon Technologies | 20 mW | + 175 C | - 40 C | 底座安装 | 1.2 kV | Tape & Reel (TR) | Tray | - | IGBTs | 6-Pack | IGBT模块 | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||||||||||||||||||||
FP75R07N2E4B16BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO2B | 1.75 V | 95 A | Infineon Technologies | + 150 C | - 40 C | 15 | 底座安装 | FP75R07N2E4_B16 SP005612711 | Infineon | Infineon Technologies | 650 V | Tape & Reel (TR) | 活跃 | 95 A | 20 mW | -40°C ~ 150°C (TJ) | Tray | IGBTs | 三相逆变器 | 20 mW | 三相桥式整流器 | IGBT模块 | 1 mA | 650 V | 1.95V @ 15V, 75A | 沟渠现场停车 | 有 | 4.6 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||||||||
NXH75M65L4Q1PTG | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | 53-PIM/Q2PACK (93x47) | onsemi | onsemi | onsemi | Tray | 活跃 | 59 A | 21 | -40°C ~ 175°C (TJ) | - | 半桥 | 86 W | Standard | 300 μA | 650 V | 2.22V @ 15V, 75A | 沟渠现场停车 | 有 | 5.665 nF @ 30 V | onsemi | ||||||||||||||||||||||||||||||||||||||
VS-ENM040M60P | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | EMIPAK | 2.7 V | 45 mA | 96 W | N-Channel | + 150 C | - 30 V, + 30 V | 100 | Vishay General Semiconductor - Diodes Division | 压装 | Vishay | Vishay Semiconductors | 48 mOhms | Details | 162 ns | 42 A | Box | 活跃 | 800 V | 600 V | 39 ns | Bulk | * | PressFit Power Module | Discrete Semiconductor Modules | 1-Phase Bridge | 44 A | 29 ns | Discrete Semiconductor Modules | Diode Power Modules | 1.72 V | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||
FP75R12N3T7B81BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 1.55 V | 75 A | Infineon Technologies | - | + 175 C | - 40 C | 10 | FP75R12N3T7_B81 SP005632512 | Infineon | Infineon Technologies | 1200 V | Tray | 活跃 | Tray | * | IGBTs | 3-Phase Inverter | IGBT模块 | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||||||||||||||||||||
VS-ENW30S120T | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | EMIPAK | Vishay General Semiconductor - Diodes Division | 1200 V | N-Channel | + 175 C | 100 | 压装 | Vishay | Vishay Semiconductors | Details | 活跃 | Box | Bulk | * | Mosfet & Diode Power Modules | Discrete Semiconductor Modules | SiC | 1-Phase Bridge | 67 A | Discrete Semiconductor Modules | Diode Power Modules | 1.35 V | Discrete Semiconductor Modules | |||||||||||||||||||||||||||||||||||||
MSCGLQ50DH120CTBL2NG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | - | 2.4 V | 110 A | 微芯片技术 | 110 A | MSCGLQ | 20 V | 375 W | + 175 C | - 55 C | 1 | Screw | Microchip | Microchip Technology / Atmel | 1200 V | Bulk | 活跃 | -55°C ~ 175°C (TJ) | - | IGBTs | Si | 不对称桥 | 375 W | Standard | IGBT模块 | 25 μA | 1200 V | 2.4V @ 15V, 50A | - | 有 | 2.77 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||||||
MSCGLQ50H120CTBL2NG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | - | 2.4 V | 110 A | 微芯片技术 | 活跃 | Bulk | 20 V | 375 W | + 175 C | - 55 C | 1 | Screw | Microchip | Microchip Technology / Atmel | 1200 V | MSCGLQ | 110 A | -55°C ~ 175°C (TJ) | - | IGBTs | Si | 全桥 | 375 W | Standard | IGBT模块 | 25 μA | 1200 V | 2.4V @ 15V, 50A | - | 有 | 2.77 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||||||
VS-GT55NA120UX | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227 | 2.39 V | 68 A | Vishay General Semiconductor - Diodes Division | 68 A | - 20 V, + 20 V | 291 W | + 150 C | - 40 C | 160 | 螺钉安装 | Vishay | Vishay Semiconductors | Details | 1.2 kV | Tube | 活跃 | -40°C ~ 150°C (TJ) | Tube | - | IGBTs | Si | 单斩波器 | 291 W | Standard | IGBT晶体管 | 50 μA | 1200 V | 2.8V @ 15V, 50A | 沟渠现场停车 | 无 | IGBT晶体管 | ||||||||||||||||||||||||||
FP150R12N3T7B11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONO3 | 1.55V | 150 A | Infineon Technologies | Tray | 活跃 | 150 A | 20V | 1200 V | - | + 175 C | - 40 C | 10 | PCB 安装 | FP150R12N3T7_B11 SP005404168 | Infineon | Infineon Technologies | 1200 V | -40°C ~ 175°C (TJ) | Tray | IGBTs | Si | 三相逆变器 | - | 20 mW | 三相桥式整流器 | IGBT模块 | 12 μA | 1200 V | 1.8V @ 15V, 150A | 150A | 沟渠现场停车 | 有 | 30.1 nF @ 25 V | IGBT硅模块 | IGBT模块 | ||||||||||||||||||||||
P3000ZL45X168HPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | TO-200AF | BG-P16826K-1 | 2.25V | 3000 A | Infineon Technologies | Tray | 活跃 | 3000 A | P3000Z | 20 V | + 150 C | - 40 C | 1 | 电缆安装 | P3000ZL45X168 SP005717389 | Infineon | Infineon Technologies | Details | 4500 V | -40°C ~ 150°C (TJ) | Tray | - | IGBTs | Single | - | Standard | IGBT模块 | 200 μA | 4500 V | 2.5V @ 15V, 3000A | 3kA | Trench | 无 | 620 nF @ 25 V | IGBT硅模块 | IGBT模块 | |||||||||||||||||||||||
FMM7G30US60I | Fairchild Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | Module | - | Fairchild Semiconductor | Bulk | Obsolete | 30 A | -40°C ~ 150°C (TJ) | - | 带制动器的三相逆变器 | 104 W | 三相桥式整流器 | 250 μA | 600 V | 2.7V @ 15V, 30A | - | 有 | 2.1 nF @ 30 V | ||||||||||||||||||||||||||||||||||||||||||
IXYN140N120A4 | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | SOT-227-4, miniBLOC | SOT-227B | 1.7 V | 380 A | IXYS | Details | 1.2 kV | Tube | 活跃 | 380 A | IXYN140 | - 20 V, + 20 V | 1.07 kW | + 175 C | - 55 C | 10 | 螺钉安装 | IXYS | IXYS | 380 A | -55°C ~ 175°C (TJ) | Tube | IGBTs | Si | Single | 1070 W | Standard | IGBT晶体管 | 25 μA | 1200 V | 1.7V @ 15V, 140A | PT | 无 | 8.3 nF @ 25 V | IGBT晶体管 | ||||||||||||||||||||||||
MSCGL40X120T3AG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | SP3F | 微芯片技术 | Microchip | Microchip Technology / Atmel | Details | Tube | 活跃 | 40 A | MSCGL40 | 1200 V | 1 | - | Tube | MSC | 三相 | Discrete Semiconductor Modules | Si | 全桥 | Standard | Discrete Semiconductor Modules | 40 A | 1200 V | - | Trench | 有 | Diode Power Modules | Discrete Semiconductor Modules | |||||||||||||||||||||||||||||||
MSCGTQ100HD65C1AG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | SP1 | 微芯片技术 | 80 A | MSCGTQ100 | 650 V | + 200 C | - 60 C | 1 | 螺钉安装 | Microchip | Microchip Technology / Atmel | Details | Tube | 活跃 | - | Tube | MSC | Trench | Discrete Semiconductor Modules | Si | 半桥 | Standard | Discrete Semiconductor Modules | 80 A | 650 V | - | Trench | 无 | 功率MOSFET模块 | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||
FD800R17KE3B2NOSA1-IR | International Rectifier | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | International Rectifier | Bulk | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF900R12ME7B11NPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 底座安装 | Module | AG-ECONOD-3 | 1.5 | 900 A | Infineon Technologies | 活跃 | Tray | - | + 175 C | - 40 C | 10 | FF900R12ME7_B11 SP005422550 | Infineon | Infineon Technologies | N | 1200 V | FF900R12 | 900 A | -40°C ~ 175°C (TJ) | Tray | IGBTs | 2 Independent | - | 20 mW | Standard | IGBT模块 | 100 μA | 1200 V | 1.8V @ 15V, 900A | 900 | 沟渠现场停车 | 有 | 122 nF @ 25 V | IGBT硅模块 | IGBT模块 |
FP200R12N3T7B80BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP25R12N2T7B16BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
P2000DE45X168HPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP35R12N2T7B16BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH80T120L3Q0S3G
onsemi
分类:Transistors - IGBTs - Modules
NXH300B100H4Q2F2S1G
onsemi
分类:Transistors - IGBTs - Modules
NXH40T120L3Q1PTG
onsemi
分类:Transistors - IGBTs - Modules
VS-ENV020F65U
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
FS300R12N3E7BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FP75R07N2E4B16BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
NXH75M65L4Q1PTG
onsemi
分类:Transistors - IGBTs - Modules
VS-ENM040M60P
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
FP75R12N3T7B81BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
VS-ENW30S120T
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
MSCGLQ50DH120CTBL2NG
Microchip Technology
分类:Transistors - IGBTs - Modules
MSCGLQ50H120CTBL2NG
Microchip Technology
分类:Transistors - IGBTs - Modules
VS-GT55NA120UX
Vishay General Semiconductor - Diodes Division
分类:Transistors - IGBTs - Modules
FP150R12N3T7B11BPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
P3000ZL45X168HPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
FMM7G30US60I
Fairchild Semiconductor
分类:Transistors - IGBTs - Modules
IXYN140N120A4
IXYS
分类:Transistors - IGBTs - Modules
MSCGL40X120T3AG
Microchip Technology
分类:Transistors - IGBTs - Modules
MSCGTQ100HD65C1AG
Microchip Technology
分类:Transistors - IGBTs - Modules
FD800R17KE3B2NOSA1-IR
International Rectifier
分类:Transistors - IGBTs - Modules
FF900R12ME7B11NPSA1
Infineon Technologies
分类:Transistors - IGBTs - Modules
