类别是'category.FIFO内存' (9205)

  • 所有品牌

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

底架

安装类型

包装/外壳

表面安装

引脚数

供应商器件包装

终端数量

操作温度

包装

系列

JESD-609代码

无铅代码

零件状态

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

子类别

技术

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

引脚数量

JESD-30代码

功能

最大电流源

资历状况

电源电压-最大值(Vsup)

电源

温度等级

电源电压-最小值(Vsup)

内存大小

元素配置

操作模式

电源电流-最大值

访问时间

数据率

数据总线宽度

组织结构

输出特性

座位高度-最大

内存宽度

待机电流-最大值

记忆密度

筛选水平

并行/串行

内存IC类型

总线定向

重传能力

FWFT支持

备用内存宽度

可编程标志支持

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

扩展类型

周期

总剂量

高度

长度

宽度

IDT7203L15TPGI
IDT7203L15TPGI
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

NO

28

28

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP,

5.05

IDT IDT7203L15TPGI, FIFO Memory, Dual 18kbit, 2K x 9 bit, Bi-Directional 15ns, 4.5 u2192 5.5 V, 28-Pin PDIP

15 ns

2048 words

2000

85 °C

-40 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

5 V

Compliant

未说明

IDT7203L15TPGI

有

e3

有

EAR99

Matte Tin (Sn) - annealed

85 °C

-40 °C

RETRANSMIT

8542.32.00.71

DUAL

THROUGH-HOLE

未说明

1

2.54 mm

compliant

28

R-PDIP-T28

不合格

活跃

5.5 V

INDUSTRIAL

4.5 V

2.3 kB

Dual

ASYNCHRONOUS

15 ns

9 b

2KX9

4.572 mm

9

18432 bit

PARALLEL

双向

5.5 V

4.5 V

NO

25 ns

3.3 mm

34.671 mm

7.62 mm

IDT7202LA12TPG
IDT7202LA12TPG
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

NO

28

28

IN-LINE

5 V

未说明

IDT7202LA12TPG

有

活跃

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP,

5.2

12 ns

Compliant

1024 words

1000

70 °C

PLASTIC/EPOXY

DIP

e3

有

EAR99

Matte Tin (Sn) - annealed

70 °C

0 °C

RETRANSMIT

8542.32.00.71

DUAL

THROUGH-HOLE

未说明

1

2.54 mm

compliant

28

R-PDIP-T28

不合格

RECTANGULAR

5.5 V

COMMERCIAL

4.5 V

1.1 kB

Dual

ASYNCHRONOUS

12 ns

9 b

1KX9

3-STATE

4.572 mm

9

9216 bit

PARALLEL

双向

5.5 V

4.5 V

NO

20 ns

3.3 mm

34.671 mm

7.62 mm

IDT72V01L15JG
IDT72V01L15JG
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

YES

32

32

活跃

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

QCCJ, LDCC32,.5X.6

5.56

IDT IDT72V01L15JG, FIFO Memory, Dual 4kbit, 512 x 9 bit, Bi-Directional 15ns, 3 u2192 3.6 V, 32-Pin PLCC

15 ns

40 MHz

1

512 words

512

70 °C

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

3.3 V

30

Compliant

IDT72V01L15JG

e3

有

EAR99

Matte Tin (Sn) - annealed

70 °C

0 °C

RETRANSMIT

8542.32.00.71

QUAD

J BEND

260

1

1.27 mm

compliant

32

R-PQCC-J32

不合格

有

3.6 V

3.3 V

COMMERCIAL

3 V

512 B

Dual

ASYNCHRONOUS

0.06 mA

15 ns

9 b

512X9

3.55 mm

9

0.005 A

4608 bit

PARALLEL

其他先进先出

双向

3.6 V

3 V

NO

25 ns

2.79 mm

13.97 mm

11.43 mm

5962-8952308EA
5962-8952308EA
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

20 ns

64 words

64

125 °C

-55 °C

CERAMIC, GLASS-SEALED

DIP

IN-LINE

5 V

5962-8952308EA

Obsolete

DEFENSE LOGISTICS AGENCY

DIP

DIP,

e0

EAR99

锡铅

8542.32.00.71

DUAL

THROUGH-HOLE

1

2.54 mm

unknown

16

不合格

5.83

5.5 V

MILITARY

4.5 V

ASYNCHRONOUS

64X4

5.08 mm

4

256 bit

PARALLEL

NO

28.57 ns

20.066 mm

7.62 mm

5962-8952306EA
5962-8952306EA
Cypress Semiconductor 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

40 ns

64 words

64

125 °C

-55 °C

CERAMIC, GLASS-SEALED

DIP

IN-LINE

5 V

5962-8952306EA

Obsolete

DEFENSE LOGISTICS AGENCY

DIP

0.300 INCH, CERDIP-16

e0

EAR99

锡铅

8542.32.00.71

DUAL

THROUGH-HOLE

1

2.54 mm

unknown

16

Qualified

5.79

5.5 V

MILITARY

4.5 V

ASYNCHRONOUS

64X4

5.08 mm

4

256 bit

PARALLEL

NO

66.67 ns

19.431 mm

7.62 mm

5962-8952304EA
5962-8952304EA
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

16

64

125 °C

-55 °C

UNSPECIFIED

DIP

RECTANGULAR

IN-LINE

5 V

5962-8952304EA

Obsolete

DEFENSE LOGISTICS AGENCY

DIP,

5.83

15 ns

e0

EAR99

锡铅

8542.32.00.71

DUAL

THROUGH-HOLE

1

2.54 mm

unknown

R-XDIP-T16

不合格

64 words

5.5 V

MILITARY

4.5 V

ASYNCHRONOUS

64X4

5.08 mm

4

256 bit

PARALLEL

YES

350 ns

20.066 mm

7.62 mm

5962-8952301EA
5962-8952301EA
Cypress Semiconductor 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

16

5962-8952301EA

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

0.300 INCH, CERDIP-16

CD16

5.85

55 ns

10 MHz

1

64 words

64

125 °C

-55 °C

CERAMIC, GLASS-SEALED

DIP

DIP16,.3

RECTANGULAR

IN-LINE

5 V

未说明

Military grade

集成设备技术

e0

无

EAR99

锡铅

8542.32.00.71

DUAL

THROUGH-HOLE

240

1

2.54 mm

not_compliant

16

R-GDIP-T16

不合格

5.5 V

5 V

MILITARY

4.5 V

ASYNCHRONOUS

0.09 mA

64X4

3-STATE

5.08 mm

4

256 bit

38535Q/M;38534H;883B

PARALLEL

其他先进先出

YES

100 ns

20.066 mm

7.62 mm

5962-8952305EA
5962-8952305EA
Cypress Semiconductor 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

16

DIP, DIP16,.3

5.79

55 ns

10 MHz

64 words

64

125 °C

-55 °C

CERAMIC, GLASS-SEALED

DIP

DIP16,.3

RECTANGULAR

IN-LINE

5 V

Non-Compliant

Military grade

5962-8952305EA

Obsolete

e0

EAR99

锡铅

8542.32.00.71

DUAL

THROUGH-HOLE

1

2.54 mm

compliant

R-GDIP-T16

Qualified

TELEDYNE E2V (UK) LTD

5.5 V

5 V

MILITARY

4.5 V

ASYNCHRONOUS

0.09 mA

64X4

5.08 mm

4

256 bit

38535Q/M;38534H;883B

PARALLEL

其他先进先出

NO

100 ns

19.431 mm

7.62 mm

IDT7204L15J8
IDT7204L15J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

CHIP CARRIER

1

4000

PLASTIC/EPOXY

LDCC32,.5X.6

20

15 ns

70 °C

无

IDT7204L15J8

40 MHz

4096 words

5 V

QCCJ

RECTANGULAR

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

5.09

QFJ

e0

无

EAR99

Tin/Lead (Sn85Pb15)

RETRANSMIT

8542.32.00.71

FIFOs

CMOS

QUAD

J BEND

225

1

1.27 mm

not_compliant

32

R-PQCC-J32

不合格

PLASTIC, LCC-32

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

4KX9

3-STATE

3.556 mm

9

0.002 A

36864 bit

PARALLEL

其他先进先出

NO

25 ns

13.9954 mm

11.4554 mm

IDT72V2103L10PF
IDT72V2103L10PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

80

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP80,.64SQ

20

6.5 ns

70 °C

无

IDT72V2103L10PF

100 MHz

131072 words

3.3 V

LQFP

SQUARE

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

5.3

QFP

e0

无

EAR99

Tin/Lead (Sn85Pb15)

ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE

8542.32.00.71

FIFOs

CMOS

QUAD

鸥翼

240

1

0.65 mm

not_compliant

80

S-PQFP-G80

不合格

PLASTIC, TQFP-80

3.45 V

3.3 V

COMMERCIAL

3.15 V

SYNCHRONOUS

0.035 mA

128KX18

1.6 mm

18

0.015 A

2359296 bit

PARALLEL

其他先进先出

9

YES

10 ns

14 mm

14 mm

723633L12PFG
723633L12PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

128-LQFP

128-TQFP (14x20)

0°C ~ 70°C

Tray

7200

活跃

4.5V ~ 5.5V

Synchronous

400mA

18K (512 x 36)

8ns

83MHz

Bi-Directional

无

有

有

Depth, Width

IDT72V241L15PF8
IDT72V241L15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

FLATPACK, LOW PROFILE

3

4000

PLASTIC/EPOXY

QFP32,.35SQ,32

20

10 ns

70 °C

无

IDT72V241L15PF8

66.7 MHz

4096 words

3.3 V

LQFP

SQUARE

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

5.19

QFP

e0

无

EAR99

Tin/Lead (Sn85Pb15)

8542.32.00.71

FIFOs

CMOS

QUAD

鸥翼

225

1

0.8 mm

not_compliant

32

S-PQFP-G32

不合格

PLASTIC, TQFP-32

3.6 V

3.3 V

COMMERCIAL

3 V

SYNCHRONOUS

0.02 mA

4KX9

1.6 mm

9

0.005 A

36864 bit

PARALLEL

其他先进先出

YES

15 ns

7 mm

7 mm

IDT72V2103L15PFG
IDT72V2103L15PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

80

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP80,.64SQ

30

10 ns

70 °C

有

IDT72V2103L15PFG

66.7 MHz

131072 words

3.3 V

LQFP

SQUARE

Integrated Device Technology Inc

活跃

INTEGRATED DEVICE TECHNOLOGY INC

5.41

QFP

e3

有

EAR99

Matte Tin (Sn) - annealed

ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE

8542.32.00.71

FIFOs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

80

S-PQFP-G80

不合格

LQFP, QFP80,.64SQ

3.45 V

3.3 V

COMMERCIAL

3.15 V

SYNCHRONOUS

0.035 mA

128KX18

1.6 mm

18

0.015 A

2359296 bit

PARALLEL

其他先进先出

9

YES

15 ns

14 mm

14 mm

IDT72V201L15PF
IDT72V201L15PF
Integrated Device Technology (IDT) 数据表

105 In Stock

-

最小起订量: 1

最小包装量: 1

YES

32

FLATPACK, LOW PROFILE

3

256

PLASTIC/EPOXY

QFP32,.35SQ,32

20

10 ns

70 °C

无

IDT72V201L15PF

66.7 MHz

256 words

3.3 V

LQFP

SQUARE

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

7.69

QFP

e0

无

EAR99

Tin/Lead (Sn85Pb15)

8542.32.00.71

FIFOs

CMOS

QUAD

鸥翼

225

1

0.8 mm

not_compliant

32

S-PQFP-G32

不合格

PLASTIC, TQFP-32

3.6 V

3.3 V

COMMERCIAL

3 V

SYNCHRONOUS

0.02 mA

256X9

1.6 mm

9

0.005 A

2304 bit

PARALLEL

其他先进先出

YES

15 ns

7 mm

7 mm

IDT72V01L15J
IDT72V01L15J
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

YES

32

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

PLASTIC, LCC-32

8.45

15 ns

50 MHz

1

512 words

512

70 °C

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

3.3 V

20

Non-Compliant

IDT72V01L15J

e0

无

EAR99

Tin/Lead (Sn85Pb15)

70 °C

0 °C

8542.32.00.71

QUAD

J BEND

225

1

1.27 mm

not_compliant

32

R-PQCC-J32

不合格

无

3.6 V

3.3 V

COMMERCIAL

3 V

ASYNCHRONOUS

0.05 mA

15 ns

512X9

3.556 mm

9

4608 bit

PARALLEL

其他先进先出

NO

25 ns

13.9954 mm

11.4554 mm

7200L50SO8
7200L50SO8
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

3

256 words

256

70 °C

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

小概要

15 MHz

50 ns

5.35

PE28

PLASTIC, SOIC-28

SOIC

INTEGRATED DEVICE TECHNOLOGY INC

Obsolete

无

7200L50SO8

未说明

5 V

集成设备技术

e0

无

EAR99

Tin/Lead (Sn85Pb15)

RETRANSMIT

8542.32.00.71

DUAL

鸥翼

225

1

1.27 mm

not_compliant

28

R-PDSO-G28

不合格

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.08 mA

256X9

3.048 mm

9

0.0005 A

2304 bit

PARALLEL

其他先进先出

NO

65 ns

18.3642 mm

8.763 mm

72413L45P
72413L45P
Renesas Electronics America 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

20

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

PDIP

DIP, DIP20,.3

PD20

5.84

19 ns

1

64 words

64

70 °C

PLASTIC/EPOXY

DIP

DIP20,.3

RECTANGULAR

IN-LINE

5 V

未说明

集成设备技术

e0

无

EAR99

Tin/Lead (Sn85Pb15)

FALL THRU 25NS

8542.32.00.71

DUAL

THROUGH-HOLE

245

1

2.54 mm

not_compliant

20

R-PDIP-T20

不合格

72413L45P

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.09 mA

64X5

4.191 mm

5

0.00009 A

320 bit

PARALLEL

其他先进先出

YES

22.22 ns

26.162 mm

7.62 mm

CD40105BDMSR
CD40105BDMSR
Intersil (Renesas Electronics America) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

16

活跃

RENESAS ELECTRONICS CORP

SBDIP

METAL SEALED, CERAMIC, DIP-16

D16.316

5.43

RH Shift Registers CMOS FIFO Register

16 words

16

125 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

15 V

未说明

Renesas

CD40105BDMSR

e3

EAR99

哑光锡

INPUT AC PARAMETRIC VALUES NOT FROM POST RADIATION MEASUREMENT; REGISTER BASED

8542.32.00.71

DUAL

THROUGH-HOLE

未说明

1

2.54 mm

compliant

16

R-CDIP-T16

不合格

有

18 V

MILITARY

3 V

SYNCHRONOUS

16X4

5.08 mm

4

64 bit

PARALLEL

YES

900.9 ns

100k Rad(Si) V

7.62 mm

IDT7202LA12P
IDT7202LA12P
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

28

IN-LINE

1

1000

PLASTIC/EPOXY

DIP28,.6

20

12 ns

70 °C

无

IDT7202LA12P

50 MHz

1024 words

5 V

DIP

RECTANGULAR

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

5.24

DIP

e0

无

EAR99

Tin/Lead (Sn85Pb15)

RETRANSMIT

8542.32.00.71

FIFOs

CMOS

DUAL

THROUGH-HOLE

240

1

2.54 mm

not_compliant

28

R-PDIP-T28

不合格

0.600 INCH, PLASTIC, DIP-28

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.125 mA

1KX9

3-STATE

4.699 mm

9

0.0005 A

9216 bit

PARALLEL

其他先进先出

NO

20 ns

36.576 mm

15.24 mm

IDT7204L15P
IDT7204L15P
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

28

IN-LINE

1

4000

PLASTIC/EPOXY

DIP28,.6

20

15 ns

70 °C

无

IDT7204L15P

40 MHz

4096 words

5 V

DIP

RECTANGULAR

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

5.05

DIP

e0

无

EAR99

Tin/Lead (Sn85Pb15)

RETRANSMIT

8542.32.00.71

FIFOs

CMOS

DUAL

THROUGH-HOLE

240

1

2.54 mm

not_compliant

28

R-PDIP-T28

不合格

PLASTIC, DIP-28

5.5 V

5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

0.12 mA

4KX9

3-STATE

4.699 mm

9

0.002 A

36864 bit

PARALLEL

其他先进先出

NO

25 ns

36.576 mm

15.24 mm

IDT7208L20JG
IDT7208L20JG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

30

20 ns

70 °C

有

IDT7208L20JG

65536 words

5 V

QCCJ

RECTANGULAR

Integrated Device Technology Inc

活跃

INTEGRATED DEVICE TECHNOLOGY INC

5.43

QFJ

QCCJ,

CHIP CARRIER

64000

e3

有

EAR99

哑光锡

RETRANSMIT

8542.32.00.71

CMOS

QUAD

J BEND

260

1

1.27 mm

compliant

32

R-PQCC-J32

不合格

PLASTIC/EPOXY

5.5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

64KX9

3.556 mm

9

589824 bit

PARALLEL

NO

30 ns

13.9954 mm

11.4554 mm

IDT7201LA12TP
IDT7201LA12TP
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

28

512 words

5 V

DIP

RECTANGULAR

Rochester Electronics LLC

接触制造商

ROCHESTER ELECTRONICS LLC

5.22

DIP,

IN-LINE

512

PLASTIC/EPOXY

12 ns

70 °C

e0

EAR99

锡铅

RETRANSMIT

8542.32.00.71

CMOS

DUAL

THROUGH-HOLE

1

2.54 mm

unknown

R-PDIP-T28

IDT7201LA12TP

5.5 V

COMMERCIAL

4.5 V

ASYNCHRONOUS

512X9

4.572 mm

9

4608 bit

PARALLEL

NO

20 ns

34.671 mm

7.62 mm

IDT72V36110L7-5PF
IDT72V36110L7-5PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

128

FLATPACK, LOW PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

QFP128,.63X.87,20

20

5 ns

70 °C

无

IDT72V36110L7-5PF

133.3 MHz

131072 words

3.3 V

LFQFP

RECTANGULAR

Integrated Device Technology Inc

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

5.19

QFP

e0

无

EAR99

Tin/Lead (Sn85Pb15)

RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE

8542.32.00.71

FIFOs

CMOS

QUAD

鸥翼

240

1

0.5 mm

not_compliant

128

R-PQFP-G128

不合格

PLASTIC, TQFP-128

3.45 V

3.3 V

COMMERCIAL

3.15 V

SYNCHRONOUS

0.04 mA

128KX36

1.6 mm

36

0.015 A

4718592 bit

PARALLEL

其他先进先出

YES

7.5 ns

20 mm

14 mm

IDT72T36125L5BBI
IDT72T36125L5BBI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

240

BGA, BGA240,18X18,40

网格排列

3

256000

PLASTIC/EPOXY

BGA240,18X18,40

-40 °C

20

3.6 ns

85 °C

无

IDT72T36125L5BBI

200 MHz

262144 words

2.5 V

BGA

SQUARE

Integrated Device Technology Inc

活跃

IDT IDT72T36125L5BBI, FIFO Memory, Dual, 256K x 36 bit, Uni-Directional 10ns 200MHz, 2.375 u2192 2.625 V, 240-Pin BGA

INTEGRATED DEVICE TECHNOLOGY INC

5.24

BGA

e0

无

EAR99

Tin/Lead (Sn63Pb37)

可进行异步操作

8542.32.00.71

FIFOs

CMOS

BOTTOM

BALL

225

1

1 mm

not_compliant

240

S-PBGA-B240

不合格

2.625 V

1.5/2.5,2.5 V

INDUSTRIAL

2.375 V

SYNCHRONOUS

0.06 mA

256KX36

1.97 mm

36

0.01 A

9437184 bit

PARALLEL

其他先进先出

YES

5 ns

19 mm

19 mm

IDT72V3680L6PFG
IDT72V3680L6PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

128

FLATPACK, LOW PROFILE, FINE PITCH

3

16000

PLASTIC/EPOXY

QFP128,.63X.87,20

30

4 ns

70 °C

有

IDT72V3680L6PFG

166 MHz

16384 words

3.3 V

LFQFP

RECTANGULAR

Integrated Device Technology Inc

活跃

INTEGRATED DEVICE TECHNOLOGY INC

5.17

QFP

e3

有

EAR99

Matte Tin (Sn) - annealed

RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE

8542.32.00.71

FIFOs

CMOS

QUAD

鸥翼

260

1

0.5 mm

compliant

128

R-PQFP-G128

不合格

LFQFP, QFP128,.63X.87,20

3.45 V

3.3 V

COMMERCIAL

3.15 V

SYNCHRONOUS

0.04 mA

16KX36

1.6 mm

36

0.015 A

589824 bit

PARALLEL

其他先进先出

YES

6 ns

20 mm

14 mm