类别是'category.FIFO内存' (9205)
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![]() | IDT7203L15TPGI | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | NO | 28 | 28 | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | 5.05 | IDT IDT7203L15TPGI, FIFO Memory, Dual 18kbit, 2K x 9 bit, Bi-Directional 15ns, 4.5 u2192 5.5 V, 28-Pin PDIP | 15 ns | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5 V | Compliant | 未说明 | IDT7203L15TPGI | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 85 °C | -40 °C | RETRANSMIT | 8542.32.00.71 | DUAL | THROUGH-HOLE | 未说明 | 1 | 2.54 mm | compliant | 28 | R-PDIP-T28 | 不合格 | 活跃 | 5.5 V | INDUSTRIAL | 4.5 V | 2.3 kB | Dual | ASYNCHRONOUS | 15 ns | 9 b | 2KX9 | 4.572 mm | 9 | 18432 bit | PARALLEL | 双向 | 5.5 V | 4.5 V | NO | 25 ns | 3.3 mm | 34.671 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||
![]() | IDT7202LA12TPG | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | NO | 28 | 28 | IN-LINE | 5 V | 未说明 | IDT7202LA12TPG | 有 | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | 5.2 | 12 ns | Compliant | 1024 words | 1000 | 70 °C | PLASTIC/EPOXY | DIP | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 70 °C | 0 °C | RETRANSMIT | 8542.32.00.71 | DUAL | THROUGH-HOLE | 未说明 | 1 | 2.54 mm | compliant | 28 | R-PDIP-T28 | 不合格 | RECTANGULAR | 5.5 V | COMMERCIAL | 4.5 V | 1.1 kB | Dual | ASYNCHRONOUS | 12 ns | 9 b | 1KX9 | 3-STATE | 4.572 mm | 9 | 9216 bit | PARALLEL | 双向 | 5.5 V | 4.5 V | NO | 20 ns | 3.3 mm | 34.671 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||
![]() | IDT72V01L15JG | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | YES | 32 | 32 | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | QCCJ, LDCC32,.5X.6 | 5.56 | IDT IDT72V01L15JG, FIFO Memory, Dual 4kbit, 512 x 9 bit, Bi-Directional 15ns, 3 u2192 3.6 V, 32-Pin PLCC | 15 ns | 40 MHz | 1 | 512 words | 512 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3.3 V | 30 | Compliant | IDT72V01L15JG | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 70 °C | 0 °C | RETRANSMIT | 8542.32.00.71 | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | 不合格 | 有 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 512 B | Dual | ASYNCHRONOUS | 0.06 mA | 15 ns | 9 b | 512X9 | 3.55 mm | 9 | 0.005 A | 4608 bit | PARALLEL | 其他先进先出 | 双向 | 3.6 V | 3 V | NO | 25 ns | 2.79 mm | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||
![]() | 5962-8952308EA | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 20 ns | 64 words | 64 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | IN-LINE | 5 V | 5962-8952308EA | Obsolete | DEFENSE LOGISTICS AGENCY | DIP | DIP, | e0 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 16 | 不合格 | 5.83 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 64X4 | 5.08 mm | 4 | 256 bit | PARALLEL | NO | 28.57 ns | 20.066 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8952306EA | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 40 ns | 64 words | 64 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | IN-LINE | 5 V | 5962-8952306EA | Obsolete | DEFENSE LOGISTICS AGENCY | DIP | 0.300 INCH, CERDIP-16 | e0 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 16 | Qualified | 5.79 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 64X4 | 5.08 mm | 4 | 256 bit | PARALLEL | NO | 66.67 ns | 19.431 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8952304EA | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 16 | 64 | 125 °C | -55 °C | UNSPECIFIED | DIP | RECTANGULAR | IN-LINE | 5 V | 5962-8952304EA | Obsolete | DEFENSE LOGISTICS AGENCY | DIP, | 5.83 | 15 ns | e0 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-XDIP-T16 | 不合格 | 64 words | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 64X4 | 5.08 mm | 4 | 256 bit | PARALLEL | YES | 350 ns | 20.066 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8952301EA | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 16 | 5962-8952301EA | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | 0.300 INCH, CERDIP-16 | CD16 | 5.85 | 55 ns | 10 MHz | 1 | 64 words | 64 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | 未说明 | Military grade | 集成设备技术 | e0 | 无 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 16 | R-GDIP-T16 | 不合格 | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.09 mA | 64X4 | 3-STATE | 5.08 mm | 4 | 256 bit | 38535Q/M;38534H;883B | PARALLEL | 其他先进先出 | YES | 100 ns | 20.066 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||
![]() | 5962-8952305EA | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 16 | DIP, DIP16,.3 | 5.79 | 55 ns | 10 MHz | 64 words | 64 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | Non-Compliant | Military grade | 5962-8952305EA | Obsolete | e0 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-GDIP-T16 | Qualified | TELEDYNE E2V (UK) LTD | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.09 mA | 64X4 | 5.08 mm | 4 | 256 bit | 38535Q/M;38534H;883B | PARALLEL | 其他先进先出 | NO | 100 ns | 19.431 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT7204L15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | CHIP CARRIER | 1 | 4000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 15 ns | 70 °C | 无 | IDT7204L15J8 | 40 MHz | 4096 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.09 | QFJ | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | PLASTIC, LCC-32 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 4KX9 | 3-STATE | 3.556 mm | 9 | 0.002 A | 36864 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 13.9954 mm | 11.4554 mm | |||||||||||||||||||||||||||||||||||||||
![]() | IDT72V2103L10PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 80 | FLATPACK, LOW PROFILE | 3 | 128000 | PLASTIC/EPOXY | QFP80,.64SQ | 20 | 6.5 ns | 70 °C | 无 | IDT72V2103L10PF | 100 MHz | 131072 words | 3.3 V | LQFP | SQUARE | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.3 | QFP | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 240 | 1 | 0.65 mm | not_compliant | 80 | S-PQFP-G80 | 不合格 | PLASTIC, TQFP-80 | 3.45 V | 3.3 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 0.035 mA | 128KX18 | 1.6 mm | 18 | 0.015 A | 2359296 bit | PARALLEL | 其他先进先出 | 9 | YES | 10 ns | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
![]() | 723633L12PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | 0°C ~ 70°C | Tray | 7200 | 活跃 | 4.5V ~ 5.5V | Synchronous | 400mA | 18K (512 x 36) | 8ns | 83MHz | Bi-Directional | 无 | 有 | 有 | Depth, Width | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT72V241L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | FLATPACK, LOW PROFILE | 3 | 4000 | PLASTIC/EPOXY | QFP32,.35SQ,32 | 20 | 10 ns | 70 °C | 无 | IDT72V241L15PF8 | 66.7 MHz | 4096 words | 3.3 V | LQFP | SQUARE | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.19 | QFP | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 225 | 1 | 0.8 mm | not_compliant | 32 | S-PQFP-G32 | 不合格 | PLASTIC, TQFP-32 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.02 mA | 4KX9 | 1.6 mm | 9 | 0.005 A | 36864 bit | PARALLEL | 其他先进先出 | YES | 15 ns | 7 mm | 7 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | IDT72V2103L15PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 80 | FLATPACK, LOW PROFILE | 3 | 128000 | PLASTIC/EPOXY | QFP80,.64SQ | 30 | 10 ns | 70 °C | 有 | IDT72V2103L15PFG | 66.7 MHz | 131072 words | 3.3 V | LQFP | SQUARE | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.41 | QFP | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 80 | S-PQFP-G80 | 不合格 | LQFP, QFP80,.64SQ | 3.45 V | 3.3 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 0.035 mA | 128KX18 | 1.6 mm | 18 | 0.015 A | 2359296 bit | PARALLEL | 其他先进先出 | 9 | YES | 15 ns | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
![]() | IDT72V201L15PF | Integrated Device Technology (IDT) | 数据表 | 105 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | FLATPACK, LOW PROFILE | 3 | 256 | PLASTIC/EPOXY | QFP32,.35SQ,32 | 20 | 10 ns | 70 °C | 无 | IDT72V201L15PF | 66.7 MHz | 256 words | 3.3 V | LQFP | SQUARE | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 7.69 | QFP | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 225 | 1 | 0.8 mm | not_compliant | 32 | S-PQFP-G32 | 不合格 | PLASTIC, TQFP-32 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.02 mA | 256X9 | 1.6 mm | 9 | 0.005 A | 2304 bit | PARALLEL | 其他先进先出 | YES | 15 ns | 7 mm | 7 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | IDT72V01L15J | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | YES | 32 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | PLASTIC, LCC-32 | 8.45 | 15 ns | 50 MHz | 1 | 512 words | 512 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3.3 V | 20 | Non-Compliant | IDT72V01L15J | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | 70 °C | 0 °C | 8542.32.00.71 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 无 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.05 mA | 15 ns | 512X9 | 3.556 mm | 9 | 4608 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 13.9954 mm | 11.4554 mm | |||||||||||||||||||||||||||||||||||||||
![]() | 7200L50SO8 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | 3 | 256 words | 256 | 70 °C | PLASTIC/EPOXY | SOP | SOP28,.5 | RECTANGULAR | 小概要 | 15 MHz | 50 ns | 5.35 | PE28 | PLASTIC, SOIC-28 | SOIC | INTEGRATED DEVICE TECHNOLOGY INC | Obsolete | 无 | 7200L50SO8 | 未说明 | 5 V | 集成设备技术 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | DUAL | 鸥翼 | 225 | 1 | 1.27 mm | not_compliant | 28 | R-PDSO-G28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.08 mA | 256X9 | 3.048 mm | 9 | 0.0005 A | 2304 bit | PARALLEL | 其他先进先出 | NO | 65 ns | 18.3642 mm | 8.763 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | 72413L45P | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 20 | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | PDIP | DIP, DIP20,.3 | PD20 | 5.84 | 19 ns | 1 | 64 words | 64 | 70 °C | PLASTIC/EPOXY | DIP | DIP20,.3 | RECTANGULAR | IN-LINE | 5 V | 未说明 | 集成设备技术 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | FALL THRU 25NS | 8542.32.00.71 | DUAL | THROUGH-HOLE | 245 | 1 | 2.54 mm | not_compliant | 20 | R-PDIP-T20 | 不合格 | 72413L45P | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.09 mA | 64X5 | 4.191 mm | 5 | 0.00009 A | 320 bit | PARALLEL | 其他先进先出 | YES | 22.22 ns | 26.162 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | CD40105BDMSR | Intersil (Renesas Electronics America) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 16 | 活跃 | RENESAS ELECTRONICS CORP | SBDIP | METAL SEALED, CERAMIC, DIP-16 | D16.316 | 5.43 | RH Shift Registers CMOS FIFO Register | 16 words | 16 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | 15 V | 未说明 | Renesas | CD40105BDMSR | e3 | EAR99 | 哑光锡 | INPUT AC PARAMETRIC VALUES NOT FROM POST RADIATION MEASUREMENT; REGISTER BASED | 8542.32.00.71 | DUAL | THROUGH-HOLE | 未说明 | 1 | 2.54 mm | compliant | 16 | R-CDIP-T16 | 不合格 | 有 | 18 V | MILITARY | 3 V | SYNCHRONOUS | 16X4 | 5.08 mm | 4 | 64 bit | PARALLEL | YES | 900.9 ns | 100k Rad(Si) V | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT7202LA12P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 28 | IN-LINE | 1 | 1000 | PLASTIC/EPOXY | DIP28,.6 | 20 | 12 ns | 70 °C | 无 | IDT7202LA12P | 50 MHz | 1024 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.24 | DIP | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 0.600 INCH, PLASTIC, DIP-28 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 1KX9 | 3-STATE | 4.699 mm | 9 | 0.0005 A | 9216 bit | PARALLEL | 其他先进先出 | NO | 20 ns | 36.576 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||
![]() | IDT7204L15P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 28 | IN-LINE | 1 | 4000 | PLASTIC/EPOXY | DIP28,.6 | 20 | 15 ns | 70 °C | 无 | IDT7204L15P | 40 MHz | 4096 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.05 | DIP | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | PLASTIC, DIP-28 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 4KX9 | 3-STATE | 4.699 mm | 9 | 0.002 A | 36864 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 36.576 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||
![]() | IDT7208L20JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | 30 | 20 ns | 70 °C | 有 | IDT7208L20JG | 65536 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.43 | QFJ | QCCJ, | CHIP CARRIER | 64000 | e3 | 有 | EAR99 | 哑光锡 | RETRANSMIT | 8542.32.00.71 | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | 不合格 | PLASTIC/EPOXY | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 64KX9 | 3.556 mm | 9 | 589824 bit | PARALLEL | NO | 30 ns | 13.9954 mm | 11.4554 mm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT7201LA12TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 28 | 512 words | 5 V | DIP | RECTANGULAR | Rochester Electronics LLC | 接触制造商 | ROCHESTER ELECTRONICS LLC | 5.22 | DIP, | IN-LINE | 512 | PLASTIC/EPOXY | 12 ns | 70 °C | e0 | EAR99 | 锡铅 | RETRANSMIT | 8542.32.00.71 | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T28 | IDT7201LA12TP | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 512X9 | 4.572 mm | 9 | 4608 bit | PARALLEL | NO | 20 ns | 34.671 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT72V36110L7-5PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 128 | FLATPACK, LOW PROFILE, FINE PITCH | 3 | 128000 | PLASTIC/EPOXY | QFP128,.63X.87,20 | 20 | 5 ns | 70 °C | 无 | IDT72V36110L7-5PF | 133.3 MHz | 131072 words | 3.3 V | LFQFP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.19 | QFP | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 240 | 1 | 0.5 mm | not_compliant | 128 | R-PQFP-G128 | 不合格 | PLASTIC, TQFP-128 | 3.45 V | 3.3 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 0.04 mA | 128KX36 | 1.6 mm | 36 | 0.015 A | 4718592 bit | PARALLEL | 其他先进先出 | YES | 7.5 ns | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||
![]() | IDT72T36125L5BBI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 240 | BGA, BGA240,18X18,40 | 网格排列 | 3 | 256000 | PLASTIC/EPOXY | BGA240,18X18,40 | -40 °C | 20 | 3.6 ns | 85 °C | 无 | IDT72T36125L5BBI | 200 MHz | 262144 words | 2.5 V | BGA | SQUARE | Integrated Device Technology Inc | 活跃 | IDT IDT72T36125L5BBI, FIFO Memory, Dual, 256K x 36 bit, Uni-Directional 10ns 200MHz, 2.375 u2192 2.625 V, 240-Pin BGA | INTEGRATED DEVICE TECHNOLOGY INC | 5.24 | BGA | e0 | 无 | EAR99 | Tin/Lead (Sn63Pb37) | 可进行异步操作 | 8542.32.00.71 | FIFOs | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | not_compliant | 240 | S-PBGA-B240 | 不合格 | 2.625 V | 1.5/2.5,2.5 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.06 mA | 256KX36 | 1.97 mm | 36 | 0.01 A | 9437184 bit | PARALLEL | 其他先进先出 | YES | 5 ns | 19 mm | 19 mm | |||||||||||||||||||||||||||||||||||||
![]() | IDT72V3680L6PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 128 | FLATPACK, LOW PROFILE, FINE PITCH | 3 | 16000 | PLASTIC/EPOXY | QFP128,.63X.87,20 | 30 | 4 ns | 70 °C | 有 | IDT72V3680L6PFG | 166 MHz | 16384 words | 3.3 V | LFQFP | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.17 | QFP | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.5 mm | compliant | 128 | R-PQFP-G128 | 不合格 | LFQFP, QFP128,.63X.87,20 | 3.45 V | 3.3 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 0.04 mA | 16KX36 | 1.6 mm | 36 | 0.015 A | 589824 bit | PARALLEL | 其他先进先出 | YES | 6 ns | 20 mm | 14 mm |
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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Integrated Device Technology (IDT)
分类:Logic - FIFOs Memory
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分类:Logic - FIFOs Memory
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Integrated Device Technology (IDT)
分类:Logic - FIFOs Memory
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Integrated Device Technology (IDT)
分类:Logic - FIFOs Memory
