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1N5809US备选型号: 1N5811US

1N5809US

Microsemi Corporation

Diode Switching 100V 6A 2-Pin E-MELF

IN PRODUCTION (Last Updated: 1 month ago)
7 Weeks
表面贴装
表面贴装
SQ-MELF, B
2
SILICON
1
Bulk
1997
e0
no
活跃
1 (Unlimited)
2
EAR99
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
175°C
-65°C
超快恢复
HIGH RELIABILITY, METALLURGICALLY BONDED
8541.10.00.80
END
环绕
未说明
not_compliant
未说明
2
Single
Fast Recovery =< 500ns, > 200mA (Io)
Standard
5μA @ 100V
875mV @ 4A
ISOLATED
6A
-65°C~175°C
3A
875mV
100V
3A
1
30 ns
5μA
100V
60pF @ 10V 1MHz
125A
有
Non-RoHS Compliant
含铅
-
-
1N5811US

Microsemi Corporation

Diode Switching 150V 6A 2-Pin E-MELF

IN PRODUCTION (Last Updated: 1 month ago)
7 Weeks
表面贴装
表面贴装
SQ-MELF, B
2
SILICON
1
Bulk
1997
e0
no
活跃
1 (Unlimited)
2
-
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
175°C
-65°C
超快恢复
HIGH RELIABILITY, METALLURGICALLY BONDED
8541.10.00.80
END
环绕
未说明
not_compliant
未说明
2
Single
Fast Recovery =< 500ns, > 200mA (Io)
Standard
5μA @ 50V
875mV @ 4A
ISOLATED
6A
-65°C~175°C
3A
875mV
150V
3A
1
30 ns
5μA
150V
60pF @ 10V 1MHz
125A
有
Non-RoHS Compliant
含铅
Lead, Tin
52 °C/W
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