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70T3339S166BC备选型号: 70T3339S200BCG

70T3339S166BC

Integrated Device Technology (IDT)

SRAM 512K X 18 DP

7 Weeks
表面贴装
256
166MHz
450mA
Bulk
2010
e0
no
活跃
3 (168 Hours)
256
Tin/Lead (Sn63Pb37)
70°C
0°C
FLOW-THROUGH OR PIPELINED ARCHITECTURE
2.5V
BOTTOM
BALL
225
1
1mm
166MHz
20
COMMERCIAL
Parallel
1.1MB
2
3.6 ns
3-STATE
38b
9 Mb
0.015A
COMMON
Synchronous
18b
2.6V
2.4V
17mm
1.5mm
17mm
1.4mm
无
符合RoHS标准
含铅
-
70T3339S200BCG

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 2.5V 9M-Bit 512K x 18 10ns/3.4ns 256-Pin CABGA

7 Weeks
-
256
200MHz
-
-
2010
e1
yes
活跃
3 (168 Hours)
256
Tin/Silver/Copper (Sn/Ag/Cu)
70°C
0°C
FLOW-THROUGH OR PIPELINED ARCHITECTURE
2.5V
BOTTOM
BALL
260
1
1mm
200MHz
30
COMMERCIAL
Parallel
1.1MB
2
3.4 ns
3-STATE
38b
9 Mb
0.015A
COMMON
-
-
2.6V
2.4V
17mm
1.7mm
17mm
1.4mm
无
符合RoHS标准
无铅
YES
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图片	产品型号	品牌	分类	封装	描述	对比
	70T3519S166BCI	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 2.5V 9M-Bit 256K x 36 12ns/3.6ns 256-Pin CABGA	对比
	70T3519S166BCGI	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 2.5V 9M-Bit 256K x 36 12ns/3.6ns 256-Pin CABGA Tube	对比