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70T3399S133BC备选型号: 70T3589S133BC

70T3399S133BC

Integrated Device Technology (IDT)

IC SRAM 2MBIT 133MHZ 256CABGA

7 Weeks
表面贴装
256
RAM, SRAM
2004
e0
no
活跃
3 (168 Hours)
256
Tin/Lead (Sn63Pb37)
70°C
0°C
FLOW-THROUGH OR PIPELINED ARCHITECTURE
BOTTOM
BALL
225
1
2.5V
1mm
133MHz
256
2.5V
COMMERCIAL
Parallel
2.6V
2.4V
2
370mA
15 ns
3-STATE
34b
2 Mb
0.015A
COMMON
Synchronous
18b
17mm
1.5mm
17mm
1.4mm
无
符合RoHS标准
含铅
-
70T3589S133BC

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 2.5V 2.25M-Bit 64K x 36 15ns/4.2ns 256-Pin CABGA

7 Weeks
表面贴装
256
RAM, SRAM
2009
e0
no
活跃
3 (168 Hours)
256
Tin/Lead (Sn63Pb37)
70°C
0°C
FLOW-THROUGH OR PIPELINED ARCHITECTURE
BOTTOM
BALL
225
1
2.5V
1mm
133MHz
256
2.5V
COMMERCIAL
Parallel
2.6V
2.4V
2
370mA
15 ns
3-STATE
32b
2.3 Mb
0.015A
COMMON
Synchronous
36b
17mm
1.5mm
17mm
1.4mm
无
符合RoHS标准
含铅
64KX36
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	70T3589S133BCI	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 2.5V 2.25M-Bit 64K x 36 15ns/4.2ns 256-Pin CABGA	对比
	70T3589S133BC8	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 2.5V 2.25M-Bit 64K x 36 15ns/4.2ns 256-Pin CABGA T/R	对比