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70T3599S166BF备选型号: 70T3319S166BF

70T3599S166BF

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 2.5V 4.5M-Bit 128K x 36 12ns/3.6ns 208-Pin CABGA

7 Weeks
表面贴装
208
RAM, SRAM
2009
e0
no
活跃
3 (168 Hours)
208
Tin/Lead (Sn63Pb37)
70°C
0°C
FLOW-THROUGH OR PIPELINED ARCHITECTURE
BOTTOM
BALL
225
1
2.5V
0.8mm
166MHz
208
2.5V
COMMERCIAL
Parallel
2.6V
2.4V
2
450mA
12 ns
3-STATE
34b
4.5 Mb
0.015A
COMMON
Synchronous
36b
15mm
15mm
1.4mm
无
符合RoHS标准
含铅
70T3319S166BF

Integrated Device Technology (IDT)

IC SRAM 4.5MBIT 166MHZ 208CABGA

7 Weeks
表面贴装
208
RAM, SRAM
2010
e0
no
活跃
3 (168 Hours)
208
Tin/Lead (Sn63Pb37)
70°C
0°C
FLOW-THROUGH OR PIPELINED ARCHITECTURE
BOTTOM
BALL
225
1
2.5V
0.8mm
166MHz
208
2.5V
COMMERCIAL
Parallel
2.6V
2.4V
2
450mA
12 ns
3-STATE
36b
4 Mb
0.015A
COMMON
Synchronous
18b
15mm
15mm
1.4mm
无
符合RoHS标准
含铅
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图片	产品型号	品牌	分类	封装	描述	对比
	70T659S12BFI8	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Dual 2.5V 4.5M-Bit 128K x 36 12ns 208-Pin CABGA T/R	对比
	70T659S12BFI	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Dual 2.5V 4.5M-Bit 128K x 36 12ns 208-Pin CABGA	对比