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70V3569S4BF备选型号: CY7C09569V-100BBC

70V3569S4BF

Integrated Device Technology (IDT)

SRAM Chip Sync Dual 3.3V 576K-Bit 16K x 36 4.2ns 208-Pin CABGA

7 Weeks
表面贴装
208
RAM, SDR, SRAM
2008
e0
no
活跃
3 (168 Hours)
208
Tin/Lead (Sn63Pb37)
70°C
0°C
PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE
BOTTOM
BALL
225
1
3.3V
0.8mm
133MHz
20
208
3.3V
COMMERCIAL
Parallel
3.45V
3.15V
72kB
2
460mA
7.5 ns
16KX36
3-STATE
28b
576 kb
0.015A
COMMON
Synchronous
36b
15mm
15mm
1.4mm
无
符合RoHS标准
含铅
-
-
-
-
-
-
-
-
-
-
-
-
-
CY7C09569V-100BBC

Cypress Semiconductor Corp

IC SRAM 576KBIT 100MHZ 172FBGA

-
表面贴装
172
Volatile
2000
e0
no
Obsolete
3 (168 Hours)
172
锡铅
-
-
FLOW-THROUGH OR PIPELINED ARCHITECTURE
BOTTOM
-
220
1
3.3V
1mm
-
-
172
3.3V
-
-
-
-
576Kb 16K x 36
2
385mA
5ns
16KX36
3-STATE
28b
576 kb
0.001A
COMMON
Synchronous
36b
15mm
-
-
无
Non-RoHS Compliant
含铅
表面贴装
172-LFBGA
0°C~70°C TA
Tray
3V~3.6V
CY7C09569
3.465V
3.135V
100MHz
SRAM
Parallel
36
3.14V
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图片	产品型号	品牌	分类	封装	描述	对比
	70V3569S5BFI	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 576K-Bit 16K x 36 5ns 208-Pin CABGA	对比
	70V3569S5BF	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 576K-Bit 16K x 36 5ns 208-Pin CABGA	对比
	70V3379S4BF	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Dual 3.3V 576K-Bit 32K x 18 4.2ns 208-Pin CABGA	对比