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71V416L10PHG备选型号: 71V416YS10PHG

71V416L10PHG

Integrated Device Technology (IDT)

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
表面贴装
TSOP
44
RAM, SDR, SRAM - Asynchronous
2005
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
鸥翼
260
1
3.3V
0.8mm
30
44
3.3V
COMMERCIAL
Parallel
3.6V
3V
512kB
1
180mA
10 ns
3-STATE
18b
4 Mb
COMMON
Asynchronous
16b
3V
18.41mm
10.16mm
1mm
无
符合RoHS标准
无铅
-
-
-
71V416YS10PHG

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II

-
表面贴装
TSOP
44
RAM, SRAM - Asynchronous
2005
e3
yes
-
3 (168 Hours)
44
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
鸥翼
260
1
3.3V
0.8mm
30
-
3.3V
COMMERCIAL
Parallel
3.6V
3V
-
1
200mA
10 ns
3-STATE
18b
4 Mb
COMMON
Asynchronous
16b
3V
-
-
-
无
符合RoHS标准
-
Bulk
16
0.02A
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图片	产品型号	品牌	分类	封装	描述	对比
	AS7C34098A-10TCN	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II	对比