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71V424L10YG备选型号: 71V424S10YG8

71V424L10YG

Integrated Device Technology (IDT)

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
YES
36
RAM, SDR, SRAM - Asynchronous
2008
e3
yes
活跃
3 (168 Hours)
36
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
J BEND
260
1
3.3V
36
3.3V
COMMERCIAL
Parallel
3.6V
3V
512kB
1
10 ns
3-STATE
19b
4 Mb
COMMON
3V
23.4mm
3.76mm
10.2mm
2.2mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
71V424S10YG8

Integrated Device Technology (IDT)

IC SRAM 4M PARALLEL 36SOJ

12 Weeks
-
36
RAM, SDR, SRAM - Asynchronous
2009
e3
yes
活跃
3 (168 Hours)
36
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
J BEND
260
1
3.3V
36
3.3V
COMMERCIAL
Parallel
3.6V
3V
512kB
1
10 ns
3-STATE
19b
4 Mb
COMMON
3V
23.4mm
3.683mm
10.2mm
2.2mm
无
符合RoHS标准
无铅
表面贴装
Tape & Reel
180mA
0.02A
Asynchronous
8b
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	AS7C34096A-10JCN	Alliance Memory, Inc.	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ	对比
	AS7C34096A-10JIN	Alliance Memory, Inc.	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM 4M, 3.3V, 10ns, FAST 512K x 8 Asynch SRAM	对比
	71V424S10YG	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比