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AS4C1G8MD3L-12BCN备选型号: IS43TR16256AL-125KBL

AS4C1G8MD3L-12BCN

Alliance Memory, Inc.

IC DRAM 8G PARALLEL 78FBGA

8 Weeks
表面贴装
78-TFBGA
YES
Volatile
0°C~95°C TC
Tray
2015
yes
活跃
3 (168 Hours)
78
EAR99
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
1.283V~1.45V
BOTTOM
未说明
1
1.35V
0.8mm
未说明
R-PBGA-B78
1.45V
1.283V
8Gb 1G x 8
1
SYNCHRONOUS
800MHz
13.75ns
DRAM
Parallel
1GX8
8
8589934592 bit
13.2mm
1.2mm
9mm
ROHS3 Compliant
-
-
-
IS43TR16256AL-125KBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 4G PARALLEL 96TWBGA

6 Weeks
表面贴装
96-TFBGA
YES
Volatile
0°C~95°C TC
Tray
-
-
活跃
3 (168 Hours)
96
-
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
1.283V~1.45V
BOTTOM
-
1
1.35V
0.8mm
-
-
1.45V
1.283V
4Gb 256M x 16
1
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
256MX16
16
-
13mm
1.2mm
-
ROHS3 Compliant
96
16b
15ns
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR16256A-125KBL	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM 4G, 1.5V, 1600Mhz DDR3 SDRAM	对比
	IS43TR16128B-125KBLI	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	IC DRAM 2G PARALLEL 96TWBGA	对比