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AS4C32M16SA-7TIN备选型号: IS42S16400J-7TL

AS4C32M16SA-7TIN

Alliance Memory, Inc.

DRAM 512M, 3.3V, 32M x 16 SDRAM

8 Weeks
表面贴装
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
Volatile
-40°C~85°C TA
Tray
2012
yes
最后一次购买
3 (168 Hours)
3V~3.6V
未说明
unknown
未说明
512Mb 32M x 16
143MHz
5.4ns
DRAM
Parallel
16b
2ns
1mm
22.2mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
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-
-
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IS42S16400J-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 54TSOP

6 Weeks
表面贴装
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
Volatile
0°C~70°C TA
Tray
-
-
活跃
3 (168 Hours)
3V~3.6V
-
-
-
64Mb 4M x 16
143MHz
5.4ns
DRAM
Parallel
16b
-
-
22.22mm
-
ROHS3 Compliant
-
Tin
e3
54
EAR99
AUTO/SELF REFRESH
DUAL
1
3.3V
0.8mm
54
3.3V
3.6V
3V
1
90mA
90mA
4MX16
3-STATE
16
14b
64 Mb
COMMON
4096
1248FP
1248
NO
YES
1.2mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比
	MT48LC16M16A2P-6A:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II	对比