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AS4C4M16S-6TCN备选型号: IS42S16400J-6TLI

AS4C4M16S-6TCN

Alliance Memory, Inc.

DRAM 64M SDRAM 4M X 16 166MHz

表面贴装
54-TSOP (0.400, 10.16mm Width)
54
54-TSOP II
Volatile
0°C~70°C TA
Tray
2012
Obsolete
3 (168 Hours)
70°C
0°C
3V~3.6V
166MHz
3.3V
Parallel
3.6V
3V
64Mb 4M x 16
166MHz
5.4ns
DRAM
Parallel
16b
2ns
12b
64 Mb
166MHz
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400J-6TLI

ISSI, Integrated Silicon Solution Inc

DRAM 64M (4Mx16) 166MHz SDR SDRAM, 3.3V

表面贴装
54-TSOP (0.400, 10.16mm Width)
54
-
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
-
-
3V~3.6V
-
3.3V
-
-
-
64Mb 4M x 16
166MHz
5.4ns
DRAM
Parallel
16b
-
14b
64 Mb
-
无
ROHS3 Compliant
无铅
6 Weeks
表面贴装
e3
54
EAR99
Matte Tin (Sn)
AUTO/SELF REFRESH
DUAL
1
3.3V
0.8mm
54
3.6V
3V
1
100mA
4MX16
3-STATE
16
COMMON
4096
1248FP
1248
NO
YES
22.22mm
1.2mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	IS42S16400J-6TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比