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AS6C4016-55ZIN备选型号: CY62146ESL-45ZSXI

AS6C4016-55ZIN

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM

8 Weeks
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
-40°C~85°C TA
Tray
2008
yes
活跃
3 (168 Hours)
44
EAR99
8542.32.00.32
2.7V~5.5V
DUAL
260
1
3V
0.8mm
40
44
3V
5.5V
3/5V
2.7V
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
55ns
18b
4 Mb
0.00003A
18MHz
55 ns
COMMON
2V
1.05mm
18.6mm
10.3mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
CY62146ESL-45ZSXI

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 44TSOP II

6 Weeks
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
-40°C~85°C TA
Tray
2001
yes
活跃
3 (168 Hours)
44
-
-
2.2V~3.6V 4.5V~5.5V
DUAL
260
1
3V
0.8mm
30
44
-
3.6V
2.5/5V
2.2V
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
45ns
18b
4 Mb
0.000007A
22MHz
45 ns
COMMON
-
-
-
-
无
ROHS3 Compliant
无铅
MoBL®
e4
Nickel/Palladium/Gold (Ni/Pd/Au)
IT CAN ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY
CY62146
20mA
16
Asynchronous
16b
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	IS62WV25616BLL-55TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Asynchronous Single 3.3 Volt 4m-Bit 256k X 16 55ns 44-Pin TSOP-II	对比
	AS6C4008-55STIN	Alliance Memory, Inc.	存储器	32-LFSOP (0.465, 11.80mm Width)	AS6C4008 Series 4-Mbit (512 K x 8) 2.7 - 5.5 V 55 ns CMOS SRAM - TSOP-32	对比
	AS6C4008-55TIN	Alliance Memory, Inc.	存储器	32-TFSOP (0.724, 18.40mm Width)	ALLIANCE MEMORY AS6C4008-55TIN SRAM, 4MB, 2.7V-5.5V, 512KX8, TSOP32	对比