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AS7C256A-20JCN备选型号: 71256SA20YG

AS7C256A-20JCN

Alliance Memory, Inc.

SRAM 256K, 5V, 20ns, FAST 32K x 8 Asynch SRAM

8 Weeks
表面贴装
28-BSOJ (0.300, 7.62mm Width)
28
28-SOJ
Volatile
0°C~70°C TA
Tube
2001
活跃
3 (168 Hours)
70°C
0°C
4.5V~5.5V
5V
Parallel
5.5V
4.5V
256Kb 32K x 8
1
20ns
SRAM
Parallel
20ns
15b
256 kb
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71256SA20YG

Integrated Device Technology (IDT)

SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM

12 Weeks
-
-
28
-
RAM, SDR, SRAM - Asynchronous
-
-
2011
活跃
3 (168 Hours)
70°C
0°C
-
5V
Parallel
5.5V
4.5V
32kB
1
20 ns
-
-
-
15b
256 kb
符合RoHS标准
无铅
表面贴装
e3
yes
28
EAR99
Matte Tin (Sn) - annealed
DUAL
J BEND
260
1
5V
28
5V
COMMERCIAL
145mA
32KX8
3-STATE
COMMON
Asynchronous
8b
17.9mm
3.556mm
7.6mm
2.67mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	71256SA20YGI	Integrated Device Technology (IDT)	存储器		SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM	对比
	71256SA20YG8	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Single 5V 256K-Bit 32K x 8 20ns 28-Pin SOJ T/R	对比
	IS62C256AL-25ULI	ISSI, Integrated Silicon Solution Inc	存储器	28-SOIC (0.330, 8.38mm Width)	SRAM Chip Async Single 5V 256K-Bit 32K x 8 25ns 28-Pin SOP	对比