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AS7C31026C-12TIN备选型号: 71V016SA12PHG

AS7C31026C-12TIN

Alliance Memory, Inc.

SRAM 1M, 3.3V, 12ns, FAST 64K x 16 Asynch SRAM

8 Weeks
44-TSOP (0.400, 10.16mm Width)
表面贴装
表面贴装
44
Volatile
-40°C~85°C TA
Tube
2006
yes
活跃
3 (168 Hours)
44
3V~3.6V
DUAL
1
3.3V
0.8mm
1MHz
44
3.3V
3.6V
3V
1Mb 64K x 16
1
SRAM
Parallel
12ns
16b
1 Mb
10.16mm
18.42mm
1mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V016SA12PHG

Integrated Device Technology (IDT)

SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM

12 Weeks
TSOP
-
表面贴装
44
RAM, SDR, SRAM - Asynchronous
-
-
2011
yes
活跃
3 (168 Hours)
44
-
DUAL
1
3.3V
0.8mm
-
44
3.3V
-
-
128kB
1
-
-
-
16b
1 Mb
10.16mm
18.41mm
-
-
符合RoHS标准
无铅
e3
Matte Tin (Sn) - annealed
70°C
0°C
鸥翼
260
30
不合格
COMMERCIAL
Parallel
3.6V
3V
150mA
12 ns
3-STATE
COMMON
Asynchronous
16b
3V
YES
1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	71V016SA12PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube/Tray	对比
	CY7C1021CV33-12ZSXE	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 1MBIT 12NS 44TSOP	对比
	71V016SA12PHG8	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R	对比