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AUIRF1018E备选型号: FDP070AN06A0

AUIRF1018E

Infineon Technologies

Trans MOSFET N-CH 60V 79A 3-Pin(3 Tab) TO-220AB

13 Weeks
通孔
通孔
TO-220-3
3
SILICON
79A Tc
-55°C~175°C TJ
Tube
HEXFET®
2008
e3
不用于新设计
1 (Unlimited)
2
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
鸥翼
260
30
R-PSSO-G2
Single
增强型MOSFET
110W
DRAIN
13 ns
N-Channel
SWITCHING
8.4m Ω @ 47A, 10V
4V @ 100μA
2290pF @ 50V
69nC @ 10V
79A
20V
0.0084Ohm
60V
88 mJ
9.02mm
10.67mm
4.83mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
FDP070AN06A0

ON Semiconductor

MOSFET N-CH 60V 80A TO-220AB

9 Weeks
通孔
通孔
TO-220-3
3
SILICON
15A Ta 80A Tc
-55°C~175°C TJ
Tube
PowerTrench®
-
e3
活跃
1 (Unlimited)
3
EAR99
Tin (Sn)
-
-
-
-
-
Single
增强型MOSFET
175W
DRAIN
12 ns
N-Channel
SWITCHING
7m Ω @ 80A, 10V
4V @ 250μA
3000pF @ 25V
66nC @ 10V
80A
20V
0.007Ohm
60V
-
-
-
-
无
ROHS3 Compliant
ACTIVE (Last Updated: 2 days ago)
1.8g
yes
60V
80A
159ns
±20V
35 ns
TO-220AB
无铅
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	IRF1018EPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-220-3	MOSFET N-CH 60V 79A TO-220AB	对比