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CY14B101LA-ZS20XI备选型号: 71V016SA20PHG

CY14B101LA-ZS20XI

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 20NS 44TSOP

13 Weeks
Gold, Tin
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Non-Volatile
70mA
-40°C~85°C TA
Tray
2009
e4
活跃
3 (168 Hours)
44
EAR99
Nickel/Palladium/Gold (Ni/Pd/Au)
8542.32.00.41
3V
DUAL
260
1
0.8mm
30
CY14B101
1Mb 128K x 8
NVSRAM
Parallel
8b
128KX8
8
20ns
1 Mb
0.005A
20 ns
8b
3.6V
2.7V
18.415mm
1.194mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V016SA20PHG

Integrated Device Technology (IDT)

SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM

12 Weeks
-
表面贴装
-
TSOP
44
RAM, SDR, SRAM - Asynchronous
120mA
-
-
2011
e3
活跃
3 (168 Hours)
44
-
Matte Tin (Sn) - annealed
-
3.3V
DUAL
260
1
0.8mm
30
-
128kB
-
-
-
-
-
-
1 Mb
-
-
16b
3.6V
3V
18.41mm
-
无
符合RoHS标准
yes
70°C
0°C
鸥翼
120mA
COMMERCIAL
Parallel
1
20 ns
3-STATE
16b
COMMON
Asynchronous
3V
10.16mm
1mm
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	CY14B101KA-ZS25XIT	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	IC NVSRAM 1M PARALLEL 44TSOP II	对比
	CY14B101NA-ZS25XI	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	IC NVSRAM 1M PARALLEL 44TSOP II	对比
	71V016SA20PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray	对比