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CY14B101LA-ZS25XI备选型号: 71V016SA20PHG

CY14B101LA-ZS25XI

Cypress Semiconductor Corp

IC NVSRAM 1M PARALLEL 44TSOP II

13 Weeks
Gold, Tin
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Non-Volatile
-40°C~85°C TA
Tray
2009
e4
yes
活跃
3 (168 Hours)
44
EAR99
Nickel/Palladium/Gold (Ni/Pd/Au)
8542.32.00.41
2.7V~3.6V
DUAL
260
1
3V
0.8mm
1MHz
40
CY14B101
44
3V
3.6V
2.7V
1Mb 128K x 8
70mA
70mA
NVSRAM
Parallel
16b
128KX8
25ns
17b
1 Mb
0.005A
25 ns
8b
1.044mm
18.52mm
10.262mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V016SA20PHG

Integrated Device Technology (IDT)

SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM

12 Weeks
-
表面贴装
-
TSOP
44
RAM, SDR, SRAM - Asynchronous
-
-
2011
e3
yes
活跃
3 (168 Hours)
44
-
Matte Tin (Sn) - annealed
-
-
DUAL
260
1
3.3V
0.8mm
-
30
-
44
3.3V
-
-
128kB
-
120mA
-
-
-
-
-
16b
1 Mb
-
-
16b
-
18.41mm
10.16mm
无
符合RoHS标准
70°C
0°C
鸥翼
COMMERCIAL
Parallel
3.6V
3V
1
120mA
20 ns
3-STATE
COMMON
Asynchronous
3V
1mm
无铅
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	AS7C31026C-12TIN	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 1M, 3.3V, 12ns, FAST 64K x 16 Asynch SRAM	对比
	CY7C1021CV33-12ZSXE	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 1MBIT 12NS 44TSOP	对比
	71V016SA20PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray	对比