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IC SRAM 4M PARALLEL 36VFBGA
6 Weeks
表面贴装
表面贴装
36-VFBGA
36
Volatile
20mA
-40°C~85°C TA
Tray
MoBL®
2003
e1
yes
活跃
3 (168 Hours)
36
Tin/Silver/Copper (Sn/Ag/Cu)
3V
BOTTOM
260
1
0.75mm
1MHz
20
CY62148
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
45ns
19b
4 Mb
0.000007A
45 ns
COMMON
Asynchronous
8b
3.6V
2.2V
210μm
8mm
6mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
IC SRAM 2MBIT 45NS 36VFBGA
6 Weeks
表面贴装
表面贴装
36-VFBGA
36
Volatile
20mA
-40°C~85°C TA
Tray
MoBL®
2003
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3V
BOTTOM
260
1
0.75mm
1MHz
30
CY62138
2Mb 256K x 8
1
SRAM
Parallel
3-STATE
45ns
18b
2 Mb
0.000003A
45 ns
COMMON
Asynchronous
8b
3.6V
2.2V
210μm
8mm
6mm
-
无
ROHS3 Compliant
无铅
R-PBGA-B48
256KX8
1V
-
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IC SRAM 4M PARALLEL 36VFBGA6 Weeks表面贴装表面贴装36-VFBGA36Volatile20mA-40°C~85°C TATrayMoBL®2003e1yes活跃3 (168 Hours)36Tin/Silver/Copper (Sn/Ag/Cu)3VBOTTOM26010.75mm1MHz20CY621484Mb 512K x 81SRAMParallel3-STATE45ns19b4 Mb0.000007A45 nsCOMMONAsynchronous8b3.6V2.2V210μm8mm6mm无SVHC无ROHS3 Compliant无铅---
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