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CY7C1019DV33-10VXI备选型号: 71V124SA12PHG8

CY7C1019DV33-10VXI

Cypress Semiconductor Corp

CYPRESS SEMICONDUCTOR CY7C1019DV33-10VXI IC, SRAM, 1MB, 128KX8, 3.3V, SOJ32

7 Weeks
表面贴装
表面贴装
32-BSOJ (0.400, 10.16mm Width)
32
Volatile
-40°C~85°C TA
Tube
2002
e4
yes
活跃
3 (168 Hours)
32
Nickel/Palladium/Gold (Ni/Pd/Au)
3V~3.6V
DUAL
260
1
3.3V
100MHz
30
CY7C1019
32
3.3V
3.6V
3V
1Mb 128K x 8
1
60mA
SRAM
Parallel
3-STATE
10ns
17b
1 Mb
0.003A
COMMON
Asynchronous
8b
2V
1.2mm
21.08mm
10.29mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
71V124SA12PHG8

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II T/R

7 Weeks
表面贴装
-
SOIC
32
RAM, SDR, SRAM - Asynchronous
-
-
2013
e3
yes
活跃
3 (168 Hours)
32
Matte Tin (Sn) - annealed
-
DUAL
260
1
3.3V
-
30
-
32
3.3V
-
-
128kB
1
130mA
-
-
3-STATE
-
17b
1 Mb
-
COMMON
Asynchronous
8b
3V
-
20.95mm
10.16mm
-
-
符合RoHS标准
无铅
70°C
0°C
鸥翼
不合格
COMMERCIAL
Parallel
3.6V
3V
12 ns
1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	CY7C1019CV33-10ZXA	Cypress Semiconductor Corp	存储器	32-SOIC (0.400, 10.16mm Width)	IC SRAM 1MBIT 10NS 32TSOP	对比
	IS63WV1288DBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II	对比
	71V124SA12PHG	Integrated Device Technology (IDT)	存储器	SOIC	SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM	对比