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CY7C1021DV33-10BVXIT备选型号: 71V016SA12BFG8

CY7C1021DV33-10BVXIT

Cypress Semiconductor Corp

IC SRAM 1M PARALLEL 48VFBGA

6 Weeks
表面贴装
表面贴装
48-VFBGA
48
Volatile
-40°C~85°C TA
Tape & Reel (TR)
1996
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3V~3.6V
BOTTOM
260
1
3.3V
0.75mm
30
CY7C1021
3.3V
3.6V
3V
1Mb 64K x 16
1
60mA
SRAM
Parallel
3-STATE
16
10ns
16b
1 Mb
0.003A
100MHz
COMMON
Asynchronous
16b
2V
8mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
71V016SA12BFG8

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 48-Pin CABGA T/R

12 Weeks
表面贴装
-
-
48
RAM, SDR, SRAM - Asynchronous
-
Tape & Reel
2011
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
-
BOTTOM
260
1
3.3V
0.75mm
30
-
3.3V
-
-
128kB
1
150mA
-
-
3-STATE
-
-
16b
1 Mb
-
-
COMMON
Asynchronous
16b
3V
7mm
无
符合RoHS标准
无铅
70°C
0°C
BALL
48
COMMERCIAL
Parallel
3.6V
3V
12 ns
7mm
1.4mm
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	AS7C31026B-10TCN	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II	对比
	CY7C1019DV33-10BVXI	Cypress Semiconductor Corp	存储器	48-VFBGA	IC SRAM 1M PARALLEL 48VFBGA	对比
	CY7C1019DV33-10BVXIT	Cypress Semiconductor Corp	存储器	48-VFBGA	IC SRAM 1M PARALLEL 48VFBGA	对比