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CY7C1041BNL-20VXC备选型号: IS61C5128AS-25QLI

CY7C1041BNL-20VXC

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 44SOJ

表面贴装
表面贴装
44-BSOJ (0.400, 10.16mm Width)
44
Volatile
170mA
0°C~70°C TA
Tube
2006
e4
yes
Obsolete
3 (168 Hours)
44
Nickel/Palladium/Gold (Ni/Pd/Au)
5V
DUAL
260
1
unknown
20
CY7C1041
不合格
5V
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
16
20ns
18b
4 Mb
0.0002A
20 ns
COMMON
Asynchronous
16b
2V
28.575mm
3.7592mm
ROHS3 Compliant
无铅
-
-
-
-
IS61C5128AS-25QLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 32SOP

表面贴装
表面贴装
32-SOIC (0.445, 11.30mm Width)
32
Volatile
15mA
-40°C~85°C TA
Tray
-
e3
yes
活跃
3 (168 Hours)
32
Matte Tin (Sn) - annealed
5V
DUAL
260
1
-
40
-
-
5V
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
-
25ns
19b
4 Mb
0.0009A
25 ns
COMMON
Asynchronous
8b
2.9V
20.75mm
-
ROHS3 Compliant
-
8 Weeks
2.75mm
11.43mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61C25616AS-25TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	4Mb, High-Speed, Low Power, Async, 256K x 16, 5v, 44 Pin TSOP II, Leadfree	对比
	IS61C5128AS-25TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 32TSOP II	对比
	CY7C1049BNL-17VC	Cypress Semiconductor Corp	存储器	36-BSOJ (0.400, 10.16mm Width)	IC SRAM 4MBIT 17NS 36SOJ	对比