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MOSFET 2N-CH 20V 4.2A SOT-26
15 Weeks
表面贴装
表面贴装
SOT-23-6
6
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
2009
e3
yes
活跃
1 (Unlimited)
6
EAR99
Matte Tin (Sn)
HIGH RELIABILITY
980mW
鸥翼
260
40
DMG9926UDM
6
增强型MOSFET
980mW
8.4 ns
2 N-Channel (Dual) Common Drain
SWITCHING
28m Ω @ 8.2A, 4.5V
900mV @ 250μA
856pF @ 10V
8.3nC @ 4.5V
8.2ns
20V
8.9 ns
4.2A
8V
20V
METAL-OXIDE SEMICONDUCTOR
逻辑电平门
1.3mm
3.1mm
1.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
MOSFET 2N-CH 20V 6.5A SOT-26
15 Weeks
表面贴装
表面贴装
SOT-23-6
6
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
2009
e3
yes
活跃
1 (Unlimited)
6
EAR99
Matte Tin (Sn)
HIGH RELIABILITY
850mW
鸥翼
260
40
DMG6968UDM
6
增强型MOSFET
850mW
53 ns
2 N-Channel (Dual) Common Drain
-
24m Ω @ 6.5A, 4.5V
900mV @ 250μA
143pF @ 10V
8.8nC @ 4.5V
78ns
20V
234 ns
6.5A
8V
20V
METAL-OXIDE SEMICONDUCTOR
逻辑电平门
1.1mm
3mm
1.6mm
无SVHC
无
ROHS3 Compliant
无铅
24mOhm
Dual
-
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