-
ON SEMICONDUCTOR - FDC638P - MOSFET Transistor, P Channel, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -800 mV
ACTIVE (Last Updated: 2 days ago)
10 Weeks
Tin
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
6
36mg
SILICON
4.5A Ta
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
2001
e3
yes
活跃
1 (Unlimited)
6
EAR99
48MOhm
-20V
DUAL
鸥翼
-4.5A
1
Single
增强型MOSFET
1.6W
12 ns
P-Channel
SWITCHING
48m Ω @ 4.5A, 4.5V
1.5V @ 250μA
1160pF @ 10V
14nC @ 4.5V
9ns
20V
±8V
9 ns
-4.5A
-800mV
8V
-20V
-20V
150°C
-800 mV
1.1mm
3mm
1.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
ON SEMICONDUCTOR - FDC638APZ - Power MOSFET, P Channel, 20 V, 4.5 A, 0.037 ohm, SuperSOT, Surface Mount
ACTIVE (Last Updated: 2 days ago)
13 Weeks
Tin
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
6
36mg
SILICON
4.5A Ta
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
2006
e3
yes
活跃
1 (Unlimited)
6
EAR99
43MOhm
-12V
DUAL
鸥翼
-4.5A
1
Single
增强型MOSFET
1.6W
6 ns
P-Channel
-
43m Ω @ 4.5A, 4.5V
1.5V @ 250μA
1000pF @ 10V
12nC @ 4.5V
20ns
20V
±12V
20 ns
-4.5A
-800mV
12V
-20V
-20V
150°C
-
1.1mm
3mm
1.7mm
无SVHC
-
ROHS3 Compliant
无铅
SMD/SMT
未说明
未说明
不合格
20A
-
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ON SEMICONDUCTOR - FDC638P - MOSFET Transistor, P Channel, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -800 mVACTIVE (Last Updated: 2 days ago)10 WeeksTin表面贴装表面贴装SOT-23-6 Thin, TSOT-23-6636mgSILICON4.5A Ta-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yes活跃1 (Unlimited)6EAR9948MOhm-20VDUAL鸥翼-4.5A1Single增强型MOSFET1.6W12 nsP-ChannelSWITCHING48m Ω @ 4.5A, 4.5V1.5V @ 250μA1160pF @ 10V14nC @ 4.5V9ns20V±8V9 ns-4.5A-800mV8V-20V-20V150°C-800 mV1.1mm3mm1.7mm无SVHC无ROHS3 Compliant无铅-----
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