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FDMQ8403备选型号: FDT86113LZ

FDMQ8403

ON Semiconductor

MOSFET SER BOOST LED DRVR

ACTIVE (Last Updated: 2 days ago)
8 Weeks
表面贴装
表面贴装
12-WDFN Exposed Pad
12
242.3mg
SILICON
4
-55°C~150°C TJ
Cut Tape (CT)
GreenBridge™ PowerTrench®
2009
e4
yes
活跃
1 (Unlimited)
12
EAR99
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
1.9W
DUAL
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
增强型MOSFET
1.9W
排水源头
4.1 ns
4 N-Channel (H-Bridge)
SWITCHING
110m Ω @ 3A, 10V
4V @ 250μA
215pF @ 15V
5nC @ 10V
1.2ns
100V
1.8 ns
3.1A
20V
6A
0.11Ohm
100V
METAL-OXIDE SEMICONDUCTOR
Standard
750μm
5mm
4.5mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
FDT86113LZ

ON Semiconductor

MOSFET 100V N-Channel PowerTrench MOSFET

ACTIVE (Last Updated: 12 hours ago)
8 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
4
250.2mg
SILICON
3.3A Tc
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
2011
e3
yes
活跃
1 (Unlimited)
4
EAR99
-
-
DUAL
-
增强型MOSFET
2.2W
DRAIN
3.8 ns
N-Channel
SWITCHING
100m Ω @ 3.3A, 10V
2.5V @ 250μA
315pF @ 50V
6.8nC @ 10V
1.3ns
-
1.5 ns
3.3A
20V
-
-
100V
-
-
1.7mm
3.7mm
6.7mm
无
ROHS3 Compliant
无铅
Tin
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
鸥翼
Single
±20V
1.7V
5 pF
无SVHC
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图片	产品型号	品牌	分类	封装	描述	对比
	FDT86106LZ	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-261-4, TO-261AA	Trans MOSFET N-CH 100V 3.2A 4-Pin(3 Tab) SOT-223 T/R	对比
	FDS86106	ON Semiconductor	晶体管 - FET，MOSFET - 单个	8-SOIC (0.154, 3.90mm Width)	MOSFET N-CH 100V 3.4A 8-SOIC	对比