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IRF1404STRLPBF备选型号: IRF1404ZSTRLPBF

IRF1404STRLPBF

Infineon Technologies

In a Pack of 5, N-Channel MOSFET, 162 A, 40 V, 3-Pin D2PAK Infineon IRF1404STRLPBF

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
162A Tc
-55°C~175°C TJ
Tape & Reel (TR)
2001
HEXFET®
e3
活跃
1 (Unlimited)
2
EAR99
4MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
40V
鸥翼
260
162A
30
R-PSSO-G2
Single
增强型MOSFET
3.8W
DRAIN
17 ns
N-Channel
SWITCHING
4m Ω @ 95A, 10V
4V @ 250μA
7360pF @ 25V
200nC @ 10V
140ns
±20V
26 ns
162A
20V
75A
40V
650A
4.826mm
10.668mm
9.65mm
无
ROHS3 Compliant
无铅
-
-
-
-
IRF1404ZSTRLPBF

Infineon Technologies

In a Pack of 5, N-Channel MOSFET, 190 A, 40 V, 3-Pin D2PAK Infineon IRF1404ZSPBF

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
180A Tc
-55°C~175°C TJ
Tape & Reel (TR)
2003
HEXFET®
e3
活跃
1 (Unlimited)
2
EAR99
3.7MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
40V
鸥翼
260
75A
30
R-PSSO-G2
Single
增强型MOSFET
200W
DRAIN
18 ns
N-Channel
SWITCHING
3.7m Ω @ 75A, 10V
4V @ 150μA
4340pF @ 25V
150nC @ 10V
110ns
±20V
58 ns
190A
20V
-
40V
-
4.826mm
10.668mm
9.65mm
无
ROHS3 Compliant
含铅
4V
42 ns
4 V
无SVHC
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	FDB8870	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans MOSFET N-CH 30V 23A 3-Pin(2 Tab) D2PAK T/R	对比
	IRF2204SPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 40V 170A D2PAK	对比