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MOSFET N-CH 55V 169A TO-220AB
12 Weeks
通孔
通孔
TO-220-3
3
SILICON
169A Tc
-55°C~175°C TJ
Tube
HEXFET®
2004
活跃
1 (Unlimited)
3
通孔
EAR99
5.3mOhm
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
55V
169A
2.54mm
1
Single
增强型MOSFET
330W
DRAIN
13 ns
N-Channel
SWITCHING
5.3m Ω @ 101A, 10V
4V @ 250μA
5480pF @ 25V
260nC @ 10V
190ns
±20V
110 ns
169A
4V
TO-220AB
20V
75A
55V
680A
55V
560 mJ
130 ns
175°C
4 V
19.8mm
10.668mm
4.826mm
无SVHC
无
ROHS3 Compliant
无铅
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MOSFET N-CH 40V 202A TO-220AB
12 Weeks
通孔
通孔
TO-220-3
3
SILICON
202A Tc
-55°C~175°C TJ
Tube
HEXFET®
2003
活跃
1 (Unlimited)
3
通孔
EAR99
4mOhm
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
40V
162A
2.54mm
1
Single
增强型MOSFET
333W
DRAIN
17 ns
N-Channel
SWITCHING
4m Ω @ 121A, 10V
4V @ 250μA
5669pF @ 25V
196nC @ 10V
190ns
±20V
33 ns
202A
4V
TO-220AB
20V
75A
40V
808A
40V
620 mJ
117 ns
175°C
4 V
19.8mm
10.668mm
4.826mm
无SVHC
无
ROHS3 Compliant
无铅
Tin
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