-
MOSFET N-CH 100V 36A TO-262
12 Weeks
通孔
通孔
TO-262-3 Long Leads, I2Pak, TO-262AA
3
SILICON
36A Tc
-55°C~175°C TJ
Tube
HEXFET®
2010
e3
活跃
1 (Unlimited)
3
EAR99
26.5MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
100V
260
36A
30
Single
增强型MOSFET
92W
DRAIN
15 ns
N-Channel
SWITCHING
26.5m Ω @ 22A, 10V
4V @ 250μA
1770pF @ 25V
63nC @ 10V
51ns
±20V
39 ns
36A
20V
100V
4 V
9.65mm
10.668mm
4.826mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
MOSFET N-CH 100V 57A TO-262
14 Weeks
通孔
通孔
TO-262-3 Long Leads, I2Pak, TO-262AA
3
SILICON
57A Tc
-55°C~175°C TJ
Tube
HEXFET®
2004
e3
不用于新设计
1 (Unlimited)
3
EAR99
23MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
100V
260
57A
30
Single
增强型MOSFET
200W
DRAIN
12 ns
N-Channel
SWITCHING
23m Ω @ 28A, 10V
4V @ 250μA
3130pF @ 25V
130nC @ 10V
58ns
±20V
47 ns
57A
20V
100V
-
9.65mm
10.668mm
4.826mm
-
无
ROHS3 Compliant
无铅
49A
280 mJ
-
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