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MOSFET N-CH 30V 14A DIRECTFET
12 Weeks
表面贴装
表面贴装
DirectFET™ Isometric MP
5
SILICON
14A Ta 59A Tc
-40°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2006
e1
活跃
1 (Unlimited)
3
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
30V
BOTTOM
14A
R-XBCC-N3
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
89W
DRAIN
12 ns
N-Channel
SWITCHING
7.7m Ω @ 14A, 10V
2.35V @ 250μA
1330pF @ 15V
17nC @ 4.5V
15ns
±20V
3.8 ns
14mA
20V
0.0077Ohm
30V
506μm
6.35mm
5.05mm
无
ROHS3 Compliant
无铅
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MOSFET N-CH 30V 14A DIRECTFET
10 Weeks
表面贴装
表面贴装
DirectFET™ Isometric SQ
4
SILICON
14A Ta 60A Tc
-40°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2007
e1
Obsolete
1 (Unlimited)
2
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
-
BOTTOM
-
R-XBCC-N2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
42W
DRAIN
7.8 ns
N-Channel
SWITCHING
7.3m Ω @ 14A, 10V
2.4V @ 25μA
1430pF @ 15V
17nC @ 4.5V
8.9ns
±20V
5.3 ns
14A
20V
0.0073Ohm
30V
506μm
4.826mm
3.95mm
无
ROHS3 Compliant
无铅
62 mJ
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MOSFET N-CH 30V 14A DIRECTFET12 Weeks表面贴装表面贴装DirectFET™ Isometric MP5SILICON14A Ta 59A Tc-40°C~150°C TJTape & Reel (TR)HEXFET®2006e1活跃1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)30VBOTTOM14AR-XBCC-N3SINGLE WITH BUILT-IN DIODE增强型MOSFET89WDRAIN12 nsN-ChannelSWITCHING7.7m Ω @ 14A, 10V2.35V @ 250μA1330pF @ 15V17nC @ 4.5V15ns±20V3.8 ns14mA20V0.0077Ohm30V506μm6.35mm5.05mm无ROHS3 Compliant无铅-
MOSFET N-CH 30V 14A DIRECTFET10 Weeks表面贴装表面贴装DirectFET™ Isometric SQ4SILICON14A Ta 60A Tc-40°C~150°C TJTape & Reel (TR)HEXFET®2007e1Obsolete1 (Unlimited)2EAR99Tin/Silver/Copper (Sn/Ag/Cu)-BOTTOM-R-XBCC-N2SINGLE WITH BUILT-IN DIODE增强型MOSFET42WDRAIN7.8 nsN-ChannelSWITCHING7.3m Ω @ 14A, 10V2.4V @ 25μA1430pF @ 15V17nC @ 4.5V8.9ns±20V5.3 ns14A20V0.0073Ohm30V506μm4.826mm3.95mm无ROHS3 Compliant无铅62 mJ
哦! 它是空的。