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IRFHS9351TRPBF备选型号: IRFHS9301TRPBF

IRFHS9351TRPBF

Infineon Technologies

INFINEON IRFHS9351TRPBF Dual MOSFET, Dual P Channel, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 VNew

12 Weeks
表面贴装
表面贴装
6-VQFN Exposed Pad
6
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2011
e3
活跃
1 (Unlimited)
6
EAR99
Matte Tin (Sn)
HIGH RELIABILITY
1.4W
IRFHS9351PBF
Dual
增强型MOSFET
1.4W
8.3 ns
2 P-Channel (Dual)
SWITCHING
170m Ω @ 3.1A, 10V
2.4V @ 10μA
160pF @ 25V
3.7nC @ 10V
30ns
30V
7.9 ns
2.3A
-1.8V
20V
5.1A
0.17Ohm
-30V
METAL-OXIDE SEMICONDUCTOR
逻辑电平门
-1.8 V
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
IRFHS9301TRPBF

Infineon Technologies

INFINEON IRFHS9301TRPBF MOSFET Transistor, P Channel, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 VNew

12 Weeks
表面贴装
表面贴装
6-PowerVDFN
6
SILICON
6A Ta 13A Tc
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2010
-
活跃
1 (Unlimited)
6
EAR99
-
-
-
-
Single
增强型MOSFET
2.1W
12 ns
P-Channel
SWITCHING
37m Ω @ 7.8A, 10V
2.4V @ 25μA
580pF @ 25V
13nC @ 10V
80ns
30V
25 ns
6A
-1.8V
20V
6A
-
-30V
-
-
-1.8 V
无SVHC
无
ROHS3 Compliant
无铅
37MOhm
DUAL
DRAIN
±20V
52A
950μm
2.1mm
2.1mm
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