-
MOSFET N-CH 60V 195A D2PAK
12 Weeks
Surface Mount, Through Hole
表面贴装
TO-262-3 Long Leads, I2Pak, TO-262AA
3
2.084002g
SILICON
195A Tc
-55°C~175°C TJ
Tube
HEXFET®, StrongIRFET™
2004
活跃
1 (Unlimited)
3
EAR99
未说明
未说明
1
Single
增强型MOSFET
375W
DRAIN
52 ns
N-Channel
SWITCHING
2m Ω @ 100A, 10V
3.7V @ 250μA
13703pF @ 25V
411nC @ 10V
141ns
±20V
104 ns
195A
3.7V
20V
0.002Ohm
60V
760A
无SVHC
ROHS3 Compliant
-
-
-
-
MOSFET N-CH 60V 195A D2PAK
12 Weeks
Surface Mount, Through Hole
表面贴装
TO-262-3 Long Leads, I2Pak, TO-262AA
3
2.084002g
SILICON
195A Tc
-55°C~175°C TJ
Tube
HEXFET®, StrongIRFET™
2013
活跃
1 (Unlimited)
3
EAR99
未说明
未说明
1
Single
增强型MOSFET
-
DRAIN
20 ns
N-Channel
SWITCHING
2.4m Ω @ 100A, 10V
3.7V @ 250μA
10034pF @ 25V
279nC @ 10V
134ns
±20V
93 ns
195A
3.7V
20V
0.0024Ohm
-
944A
无SVHC
ROHS3 Compliant
60V
60V
775 mJ
-
添加型号