MOSFET N-CH 100V 17A I-PAK
12 Weeks
通孔
通孔
TO-251-3 Short Leads, IPak, TO-251AA
3
SILICON
17A Tc
-55°C~175°C TJ
Tube
HEXFET®
2004
e3
活跃
1 (Unlimited)
3
EAR99
105mOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, ULTRA LOW RESISTANCE
100V
SINGLE
260
17A
30
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
52W
DRAIN
7.2 ns
N-Channel
SWITCHING
105m Ω @ 10A, 10V
2V @ 250μA
800pF @ 25V
34nC @ 5V
53ns
±16V
26 ns
17A
2V
16V
100V
60A
100V
150 mJ
2 V
6.22mm
6.7056mm
2.3876mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.205 Ohm; Id -13A; I-pak (TO-251AA); Pd 66W
12 Weeks
通孔
通孔
TO-251-3 Short Leads, IPak, TO-251AA
3
SILICON
13A Tc
-55°C~150°C TJ
Tube
HEXFET®
1999
e3
活跃
1 (Unlimited)
3
EAR99
-
Matte Tin (Sn) - with Nickel (Ni) barrier
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
-100V
-
260
-13A
30
-
增强型MOSFET
66W
DRAIN
15 ns
P-Channel
SWITCHING
205m Ω @ 7.8A, 10V
4V @ 250μA
760pF @ 25V
58nC @ 10V
58ns
±20V
46 ns
-13A
-4V
20V
-100V
52A
-100V
-
-4 V
6.22mm
6.7056mm
2.3876mm
无SVHC
无
ROHS3 Compliant
无铅
通孔
2.28mm
9.65mm
Single
100V
0.205Ohm