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IS41C16105C-50KLI备选型号: CY62167ELL-45ZXI

IS41C16105C-50KLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip FPM 16M-Bit 1Mx16 5V 42-Pin SOJ

表面贴装
表面贴装
42-BSOJ (0.400, 10.16mm Width)
42
Volatile
90mA
-40°C~85°C TA
Tube
Obsolete
3 (168 Hours)
42
EAR99
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
5V
DUAL
1
1.27mm
16Mb 1M x 16
1
25ns
DRAM
Parallel
16b
1MX16
16
10b
16 Mb
27.305mm
3.76mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CY62167ELL-45ZXI

Cypress Semiconductor Corp

IC SRAM 16MBIT 45NS 48TSOP

表面贴装
表面贴装
48-TFSOP (0.724, 18.40mm Width)
48
Volatile
30mA
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
48
-
-
5V
DUAL
1
0.5mm
16Mb 2M x 8 1M x 16
1
-
SRAM
Parallel
-
-
16
-
16 Mb
-
-
无
ROHS3 Compliant
6 Weeks
MoBL®
2001
e3
Matte Tin (Sn)
260
30
CY62167
5V
3-STATE
45ns
45 ns
COMMON
Asynchronous
2V
8
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS41LV16105C-50TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC DRAM 16M PARALLEL 44TSOP II	对比
	IS41LV16100C-50TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC DRAM 16M PARALLEL 44TSOP II	对比
	CY62167ELL-45ZXIT	Cypress Semiconductor Corp	存储器	48-TFSOP (0.724, 18.40mm Width)	IC SRAM 16M PARALLEL 48TSOP I	对比