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IS42S32160F-7TL备选型号: IS42S32800D-7TLI

IS42S32160F-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 86TSOP II

8 Weeks
Tin
表面贴装
表面贴装
86-TFSOP (0.400, 10.16mm Width)
86
Volatile
0°C~70°C TA
Tube
活跃
3 (168 Hours)
86
EAR99
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
8542.32.00.28
3V~3.6V
DUAL
1
3.3V
0.5mm
不合格
3.3V
3.6V
3V
512Mb 16M x 32
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
32b
16MX32
3-STATE
32
13b
512 Mb
0.004A
COMMON
8192
1248FP
1248
22.22mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS42S32800D-7TLI

ISSI, Integrated Silicon Solution Inc

INTEGRATED SILICON SOLUTION (ISSI) IS42S32800D-7TLI SDRAM, IND, 8M X 32, 3V, 86TSOP2

-
Tin
表面贴装
表面贴装
86-TFSOP (0.400, 10.16mm Width)
86
Volatile
-40°C~85°C TA
Tray
Obsolete
3 (168 Hours)
86
EAR99
AUTO/SELF REFRESH
8542.32.00.24
3V~3.6V
DUAL
1
3.3V
0.5mm
-
3.3V
3.6V
3V
256Mb 8M x 32
1
-
143MHz
5.4ns
DRAM
Parallel
32b
8MX32
-
32
13b
256 Mb
0.003A
COMMON
4096
1248FP
1248
22.22mm
1.2mm
符合RoHS标准
e3
yes
260
40
86
150mA
32MB
无SVHC
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32200L-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	86-TFSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II	对比
	IS42S32200L-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	86-TFSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II	对比