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IS42S32160F-7TLI备选型号: IS42S32400F-7TL

IS42S32160F-7TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 86TSOP II

8 Weeks
表面贴装
86-TFSOP (0.400, 10.16mm Width)
YES
86
Volatile
-40°C~85°C TA
Tube
活跃
3 (168 Hours)
90
EAR99
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
8542.32.00.28
3.3V
BOTTOM
1
0.8mm
R-PBGA-B90
不合格
3.3V
512Mb 16M x 32
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
16MX32
3-STATE
32
0.004A
536870912 bit
COMMON
3.6V
3V
8192
1248FP
1248
13mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS42S32400F-7TL

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II

8 Weeks
表面贴装
86-TFSOP (0.400, 10.16mm Width)
-
86
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
86
EAR99
AUTO/SELF REFRESH
8542.32.00.02
3.3V
DUAL
1
0.5mm
-
-
-
128Mb 4M x 32
1
-
143MHz
5.4ns
DRAM
Parallel
4MX32
3-STATE
-
0.002A
-
COMMON
3.6V
3V
4096
-
-
22.42mm
-
10.29mm
ROHS3 Compliant
表面贴装
100mA
e3
Matte Tin (Sn) - annealed
32b
14b
128 Mb
1.05mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32800J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	86-TFSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256M-Bit 8M x 32 3.3V 86-Pin TSOP-II	对比
	IS42S32400F-7TLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	86-TFSOP (0.400, 10.16mm Width)	DRAM 128M 4Mx32 143Mhz SDRAM, 3.3v	对比