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IS42S32200L-6B备选型号: IS42S32400F-6BLI

IS42S32200L-6B

ISSI, Integrated Silicon Solution Inc

DRAM 64M (2Mx32) 166MHz SDRAM, 3.3v

8 Weeks
表面贴装
90-TFBGA
YES
90
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
BOTTOM
1
3.3V
0.8mm
90
3.6V
3V
64Mb 2M x 32
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
32b
2MX32
32
67108864 bit
13mm
1.2mm
Non-RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
IS42S32400F-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin WBGA

8 Weeks
表面贴装
90-TFBGA
-
90
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
BOTTOM
1
3.3V
0.8mm
90
3.6V
3V
128Mb 4M x 32
1
-
166MHz
5.4ns
DRAM
Parallel
32b
4MX32
32
-
13mm
1.2mm
ROHS3 Compliant
表面贴装
3.3V
150mA
3-STATE
14b
128 Mb
0.002A
COMMON
4096
1248FP
1248
无
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	IS42S32400F-6BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA	对比