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IS43LR32800G-6BL备选型号: IS43LR32160B-6BLI

IS43LR32800G-6BL

ISSI, Integrated Silicon Solution Inc

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM

14 Weeks
表面贴装
90-TFBGA
YES
90
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
不合格
1.8V
256Mb 8M x 32
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
32b
8MX32
3-STATE
32
15ns
0.00001A
268435456 bit
COMMON
1.95V
1.7V
4096
24816
24816
13mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
IS43LR32160B-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin TFBGA

14 Weeks
表面贴装
90-TFBGA
-
90
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
不合格
-
512Mb 16M x 32
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
32b
16MX32
3-STATE
32
12ns
0.00001A
-
COMMON
1.95V
1.7V
8192
24816
24816
13mm
1.2mm
ROHS3 Compliant
表面贴装
110mA
e1
yes
EAR99
锡银铜
8542.32.00.28
260
40
15b
512 Mb
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42VM32800K-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM 256M, 1.8V, 166Mhz 8Mx32 Mobile SDR	对比
	IS43LR32160C-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM 512M, 1.8V, 166Mhz Mobile DDR	对比