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IS43R16320D-5TL备选型号: MT46V32M16P-5B:J

IS43R16320D-5TL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 66-Pin TSOP-II

8 Weeks
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
430mA
0°C~70°C TA
Tray
e3
yes
活跃
3 (168 Hours)
66
EAR99
哑光锡
AUTO/SELF REFRESH
8542.32.00.28
2.5V
DUAL
260
1
0.65mm
40
430mA
2.6V
512Mb 32M x 16
1
200MHz
700ps
DRAM
Parallel
16b
32MX16
3-STATE
16
15ns
15b
512 Mb
0.025A
COMMON
2.7V
8192
248
248
22.22mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
MT46V32M16P-5B:J

Micron Technology Inc.

IC DRAM 512M PARALLEL 66TSOP

4 Weeks
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
230mA
0°C~70°C TA
Tray
e3
yes
活跃
3 (168 Hours)
66
EAR99
-
AUTO/SELF REFRESH
8542.32.00.28
2.5V
DUAL
260
1
0.65mm
30
-
2.6V
512Mb 32M x 16
1
200MHz
700ps
DRAM
Parallel
16b
32MX16
3-STATE
-
15ns
15b
512 Mb
0.005A
COMMON
2.7V
8192
-
-
22.22mm
-
无
ROHS3 Compliant
无铅
Tin
2011
MT46V32M16
400MHz
70°C
1.2mm
10.16mm
无SVHC
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16160D-6TL-TR	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 256M (16Mx16) 166MHz DDR 2.5v	对比
	IS46R16160D-5TLA1	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM	对比
	MT46V16M16P-5B:M	Micron Technology Inc.	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP	对比