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IS43TR16128BL-15HBL备选型号: IS43TR16256AL-125KBL

IS43TR16128BL-15HBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin TW-BGA

6 Weeks
表面贴装
表面贴装
96-TFBGA
96
Volatile
0°C~95°C TC
Tray
活跃
3 (168 Hours)
96
AUTO/SELF REFRESH
1.283V~1.45V
BOTTOM
1
1.35V
0.8mm
不合格
1.35V
1.45V
1.283V
2Gb 128M x 16
1
210mA
ASYNCHRONOUS
667MHz
20ns
DRAM
Parallel
128MX16
3-STATE
16
15ns
17b
2 Gb
0.014A
COMMON
8192
48
48
13mm
1.2mm
ROHS3 Compliant
-
-
IS43TR16256AL-125KBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 4G PARALLEL 96TWBGA

6 Weeks
-
表面贴装
96-TFBGA
96
Volatile
0°C~95°C TC
Tray
活跃
3 (168 Hours)
96
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
1.283V~1.45V
BOTTOM
1
1.35V
0.8mm
-
-
1.45V
1.283V
4Gb 256M x 16
1
-
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
256MX16
-
16
15ns
-
-
-
-
-
-
-
13mm
1.2mm
ROHS3 Compliant
YES
16b
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR82560BL-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 2G-Bit 256M x 8 1.35V 78-Pin TWBGA	对比
	IS43TR16256A-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	4G, 1.5V, Ddr3, 256Mx16, 1333Mt/S @ 9-9-9, 96 Ball Bga (9Mm X13mm) Rohs	对比