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IS61VPS51236A-250B3L备选型号: IS61LPD51236A-250B3LI

IS61VPS51236A-250B3L

ISSI, Integrated Silicon Solution Inc

SRAM 18Mb (512Kx36) 2.5v Sync SRAM 2.5v

表面贴装
165-TBGA
YES
165
Volatile
450mA
0°C~70°C TA
Tray
e3
yes
Obsolete
3 (168 Hours)
165
哑光锡
2.5V
BOTTOM
225
1
1mm
2.5/3.33.3V
18Mb 512K x 36
4
250MHz
2.6ns
SRAM
Parallel
512KX36
3-STATE
36
19b
18 Mb
0.11A
COMMON
Synchronous
36b
2.625V
2.375V
15mm
1.2mm
无
符合RoHS标准
-
-
-
-
IS61LPD51236A-250B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

表面贴装
165-TBGA
YES
165
Volatile
500mA
-40°C~85°C TA
Tray
e1
yes
活跃
3 (168 Hours)
165
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
BOTTOM
260
1
1mm
-
18Mb 512K x 36
4
250MHz
2.6ns
SRAM
Parallel
512KX36
3-STATE
36
19b
18 Mb
0.075A
COMMON
Synchronous
36b
-
3.135V
15mm
1.2mm
无
ROHS3 Compliant
12 Weeks
3A991.B.2.A
流水线结构
10
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61LPS51236A-250B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	IC SRAM 18M PARALLEL 165TFBGA	对比
	IS61NVP51236-200B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	SRAM 18Mb (512Kx36) 2.5v Sync SRAM 2.5v	对比
	71T75802S200BGG	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.2ns 119-Pin BGA Tube/Tray	对比