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IS61WV25616EDBLL-8TLI备选型号: IS61LV5128AL-10TLI

IS61WV25616EDBLL-8TLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 3.3V 4M-bit 256K x 16 8ns 44-Pin TSOP-II

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
44
Volatile
45mA
-40°C~85°C TA
Tray
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn)
3.3V
DUAL
225
1
0.8mm
未说明
不合格
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
16
8ns
18b
4 Mb
0.006A
8 ns
COMMON
Asynchronous
16b
2V
3.63V
2.97V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
IS61LV5128AL-10TLI

ISSI, Integrated Silicon Solution Inc

INTEGRATED SILICON SOLUTION (ISSI) IS61LV5128AL-10TLI SRAM 4MB 512K X 8 3V 10NS, 61LV5128

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
-
44
Volatile
95mA
-40°C~85°C TA
Tray
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn) - annealed
3.3V
DUAL
260
1
0.8mm
40
-
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
-
10ns
19b
4 Mb
0.02A
-
COMMON
Asynchronous
8b
-
3.63V
-
ROHS3 Compliant
表面贴装
TSOP-2-44-11960X18520DE
100MHz
85°C
1.2mm
18.52mm
10.29mm
无SVHC
无
无铅
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	CY7C1041CV33-8ZSXIT	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 8ns 44-Pin TSOP-II T/R	对比