-
9-AMPERE LOW-SIDE ULTRAFAST MO
11 Weeks
表面贴装
表面贴装
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
1.59999g
Low-Side
-55°C~150°C TJ
Tube
2011
活跃
3 (168 Hours)
125°C
-40°C
4.5V~35V
1
2A
1
35V
4.5V
10μA
30 ns
Non-Inverting
22ns
15 ns
22ns 15ns
Single
1
IGBT, N-Channel, P-Channel MOSFET
9A 9A
ROHS3 Compliant
-
9-AMPERE LOW-SIDE ULTRAFAST MO
11 Weeks
表面贴装
表面贴装
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
1.59999g
Low-Side
-55°C~150°C TJ
Tube
2014
活跃
3 (168 Hours)
125°C
-40°C
4.5V~35V
1
2A
1
35V
4.5V
10μA
30 ns
Inverting
22ns
15 ns
22ns 15ns
Single
1
IGBT, N-Channel, P-Channel MOSFET
9A 9A
ROHS3 Compliant
-
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9-AMPERE LOW-SIDE ULTRAFAST MO11 Weeks表面贴装表面贴装TO-263-6, D2Pak (5 Leads + Tab), TO-263BATO-263-51.59999gLow-Side-55°C~150°C TJTube2011活跃3 (168 Hours)125°C-40°C4.5V~35V12A135V4.5V10μA30 nsNon-Inverting22ns15 ns22ns 15nsSingle1IGBT, N-Channel, P-Channel MOSFET9A 9AROHS3 Compliant
9-AMPERE LOW-SIDE ULTRAFAST MO11 Weeks表面贴装表面贴装TO-263-6, D2Pak (5 Leads + Tab), TO-263BATO-263-51.59999gLow-Side-55°C~150°C TJTube2014活跃3 (168 Hours)125°C-40°C4.5V~35V12A135V4.5V10μA30 nsInverting22ns15 ns22ns 15nsSingle1IGBT, N-Channel, P-Channel MOSFET9A 9AROHS3 Compliant
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