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MT46V16M16P-5B:M备选型号: IS43R16160D-6TL

MT46V16M16P-5B:M

Micron Technology Inc.

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP

4 Weeks
Tin
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
0°C~70°C TA
Tray
2012
e3
活跃
3 (168 Hours)
66
EAR99
AUTO/SELF REFRESH
8542.32.00.24
2.5V~2.7V
DUAL
260
1
2.6V
0.65mm
30
MT46V16M16
2.5V
2.7V
2.6V
256Mb 16M x 16
1
175mA
200MHz
700ps
DRAM
Parallel
16b
16MX16
3-STATE
15ns
15b
256 Mb
0.004A
400MHz
COMMON
8192
1.2mm
22.22mm
10.16mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
IS43R16160D-6TL

ISSI, Integrated Silicon Solution Inc

DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM

6 Weeks
Tin
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
0°C~70°C TA
Tray
-
-
活跃
3 (168 Hours)
66
EAR99
AUTO/SELF REFRESH
8542.32.00.24
2.3V~2.7V
DUAL
-
1
2.5V
0.65mm
-
-
2.5V
2.7V
-
256Mb 16M x 16
1
280mA
166MHz
700ps
DRAM
Parallel
16b
16MX16
3-STATE
15ns
15b
256 Mb
0.004A
-
COMMON
8192
-
22.22mm
-
-
无
ROHS3 Compliant
无铅
66
2.3V
16
248
248
1.2mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16160G-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 256M 16Mx16 166MHz SDR SDRAM, 3.3V	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比
	MT48LC16M16A2P-6A:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II	对比